MSMLJ30A Allicdata Electronics
Allicdata Part #:

1086-9027-ND

Manufacturer Part#:

MSMLJ30A

Price: $ 1.84
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 30V 48.4V DO214AB
More Detail: N/A
DataSheet: MSMLJ30A datasheetMSMLJ30A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
385 +: $ 1.66667
Stock 1000Can Ship Immediately
$ 1.84
Specifications
Voltage - Clamping (Max) @ Ipp: 48.4V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 62A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 33.3V
Voltage - Reverse Standoff (Typ): 30V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes such as the MSMLJ30A are used for surge current protection. The MSMLJ30A is a collector to emitter ultrafast avalanche diode. It is composed of a silicon avalanche diode and a bipolar transistor, with the diode responsible for absorbing the surge current and the transistor responsible for dissipating the surge energy.

TVS Diode is a form of semiconductor that is designed to protect sensitive devices in a circuit. Their main purpose is to provide protection against voltage spikes due to electrostatic discharge (ESD), lightning, and other forms of electrical interference. The MSMLJ30A is specifically designed for ESD applications where quick response and high surge capability are necessary. Its ultrafast response helps prevent the damaging effects of ESD after initial contact.

The MSMLJ30A is designed to provide protection for a wide range of common ESD sources, including human body model (HBM), machine model (MM), and charger model (CM). The device has a 30A peak pulse current rating, a 5V breakdown voltage, and an operating temperature range between -55 and +150°C. It also features a low leakage current of 5mA and has superior immunity from higher frequencies. All of these features make it an ideal choice for protecting sensitive components from ESD.

The working principle of the MSMLJ30A is based on its Avalanche Effect. This is a phenomenon that occurs in diode junctions when a voltage is applied to the diode. As voltage is applied, the diode is able to withstand a higher current than it normally could. This allows the diode to absorb the energy of the current spike, and the transistor provides additional protection by dissipating the energy into the surrounding environment.

The TVS diode is an invaluable tool for protecting sensitive components from sudden surges in current. The MSMLJ30A is an ideal choice for ESD protection due to its low static leakage current, quick response time, and high pulse current rating. Its wide range of operating temperatures makes it ideal for a variety of applications, and its superior immunity to higher frequency interference ensures reliable protection. By utilizing these features, the MSMLJ30A is able to effectively protect a variety of components from dangerous ESD.

The specific data is subject to PDF, and the above content is for reference

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