MSMLJ36AE3 Allicdata Electronics
Allicdata Part #:

1086-9036-ND

Manufacturer Part#:

MSMLJ36AE3

Price: $ 1.84
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 36V 58.1V DO214AB
More Detail: N/A
DataSheet: MSMLJ36AE3 datasheetMSMLJ36AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
385 +: $ 1.66667
Stock 1000Can Ship Immediately
$ 1.84
Specifications
Voltage - Clamping (Max) @ Ipp: 58.1V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 51.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 40V
Voltage - Reverse Standoff (Typ): 36V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes have played an important role in the world of circuit protection. These devices offer high speed, low leakage current, and excellent clamping performance. One such device is the MSMLJ36AE3, which offers excellent protection from short-circuits, load dumps, transients, overvoltages, and electrostatics. This article will discuss the application field and working principle of the MSMLJ36AE3 TVS Diode.

Application Field

The MSMLJ36AE3 is a diode designed to protect devices from overvoltage and overload surges as well as electromagnetic interference (EMI). It is commonly used in automotive, industrial, communication, consumer, and medical electronic equipment. It can be used in a variety of situations, including automotive DC connector applications, power supplies in industrial equipment, telecom and networking systems, handheld and portable devices, gaming consoles, and printer inputs.

The MSMLJ36AE3 provides protection from overvoltage and overload surges up to 1500 W of peak pulse power and 36 V of breakdown voltage. It has a typical capacitance of 1 pF, allowing for good transient suppression. Furthermore, the device also maintains low leakage current and clamping voltage of 7 V, allowing it to protect sensitive electronics against ESD, EFT, and surge events.

Working Principle

The MSMLJ36AE3 TVS Diode works on the principle of voltage clamping. This is done by using a semiconductor diode that, when a predetermined voltage is exceeded, will conduct current. This process is known as \'avalanche breakdown\', and it clamps the voltage to the breakdown voltage of the diode, which in the case of the MSMLJ36AE3 is 36 V. In other words, when a voltage spike or voltage transient is detected, the diode will conduct current and thus limit the overvoltage or overload surge to a predetermined level.

The MSMLJ36AE3 also has a low capacitance of 1 pF, which is necessary for fast response. This means that it can respond quickly to transient voltages, and limit overvoltage in a short period of time. The device also features low leakage current, which helps to reduce power consumption and maintain high operational stability.

The MSMLJ36AE3 is an excellent choice for protecting equipment against overvoltage and overload surge events. Its high peak pulse power of 1500 W, low capacitance, and 36 V breakdown voltage make it an ideal device for circuit protection applications. Additionally, its low leakage current and clamping voltage keep the circuit stable and help to protect sensitive electronic components from ESD, EFT, and surge events.

The specific data is subject to PDF, and the above content is for reference

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