MSMLJ58AE3 Allicdata Electronics
Allicdata Part #:

1086-9068-ND

Manufacturer Part#:

MSMLJ58AE3

Price: $ 1.84
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 58V 93.6V DO214AB
More Detail: N/A
DataSheet: MSMLJ58AE3 datasheetMSMLJ58AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
385 +: $ 1.66667
Stock 1000Can Ship Immediately
$ 1.84
Specifications
Voltage - Clamping (Max) @ Ipp: 93.6V
Supplier Device Package: DO-214AB
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 32A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 64.4V
Voltage - Reverse Standoff (Typ): 58V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMLJ58AE3 Application Field and Working Principle

TVS - Diodes

Transient voltage suppressors (TVS) are an important component of electronic systems and devices employed for protection against very high voltage transients. MSMLJ58AE3 is one of the representatives in the TVS diode family manufactured by ON Semiconductor. In this article, we will explore the application field of MSMLJ58AE3 and its working principles.

Application Field of MSMLJ58AE3

MSMLJ58AE3 is designed with 58V reverse breakdown voltage and is capable of handling high transient peak pulse power of up to 450 Watts. Thanks to its specially optimized design and superior material, the eSDC (electrostatic discharge current) peaks of MSMLJ58AE3 can reach 1.5 kilo-amps (kA) @ 8/20μs waveshape. With these features, the device is widely applied in various power supply protections, motor protections and communications applications as well as AC/DC input and I/O lightning protection. In addition, in comparison to bulkier TVS Diodes, MSMLJ58AE3 is relatively small in size, compatible with lead-free soldering and withstanding high reflow temperatures of up to 260°C. This makes it suitable for automatic assembly.

Working Principle of MSMLJ58AE3

The operating principle of the MSMLJ58AE3 is similar to general diode and it is activated by replacing P-type silicon material with Zener - Avalanche Material. In the off state, the diode behaves like a simple PN junction diode, blocking the current from flowing through. In the reverse bias condition, if the voltage over the PN junction exceeds its breakdown value, the built-up electric field will cause carriers to be accelerated and gain enough energy for impact-ionization. With impact-ionization being triggered, a lot of carriers are generated and the junction turns into a low resistance conducting channel. Thus, by shunting a huge amount of current away from the vulnerable areas of the device, the TVS Diode can always protect our device from getting damaged from overvoltage.

In the conclusion, the MSMLJ58AE3 TVS diode offers a wide range of applications from power supply protection to communications protection. It has superior electrostatic discharge current peak of 1.5kA and is capable of withstanding high reflow temperatures of up to 260°C. The working principle behind MSMLJ58AE3 is the principle of Zener avalanche breakdown.

The specific data is subject to PDF, and the above content is for reference

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