MSMLJ75AE3

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The MSMLJ75AE3 is a TVS diode designed to protect electronic circuits from voltage transient events like electrostatic discharge (ESD). It is a low-capacitance (0.8pF), ultra-low-capacitance device. It has an ESD immunity of up to 30kV and a peak pulse power dissipation of 150 W. It is ideal for applications such as USB ports, cell phones, and other high-speed systems that are prone to damage from static electricity.

Working Principle: The MSMLJ75AE3 operates on a simple principle; when an electric current passes through it, the diode is triggered and it absorbs the transient voltage spike. It is designed to have a high, fast breakdown voltage and a low static leakage current. The device begins to conduct current when the voltage rises above the break-over voltage. This reduces the transient voltage spike to a safe level, preventing damage to the connected circuit.

Application Field: The MSMLJ75AE3 is ideal for use in a variety of applications, including USB ports, cell phones, medical devices, laptops, and other high-speed systems. It is designed to provide over-voltage protection against ESD events up to 30 kV. Additionally, it offers robust over-current protection for these sensitive systems. The device is also RoHS compliant, making it suitable for use in a wide variety of applications.

The MSMLJ75AE3 is a low-capacitance, ultra-low-capacitance TVS diode designed to protect electronic circuits from voltage transient events like ESD. It is a high-speed device with ESD immunity of up to 30kV, and its peak pulse power dissipation of 150W makes it suitable for a variety of applications, ranging from USB ports, cell phones, and other high-speed systems that are prone to damage from ESD. The device operates on the principle of absorbing transient voltage spikes and preventing them from damaging the connected circuit by reducing them to a safe level.

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