MSMLJ90AE3/TR Allicdata Electronics
Allicdata Part #:

MSMLJ90AE3/TRMS-ND

Manufacturer Part#:

MSMLJ90AE3/TR

Price: $ 1.88
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMLJ90AE3/TR datasheetMSMLJ90AE3/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
400 +: $ 1.71329
Stock 1000Can Ship Immediately
$ 1.88
Specifications
Current - Peak Pulse (10/1000µs): 20.6A
Supplier Device Package: SMLJ (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 146V
Voltage - Breakdown (Min): 100V
Voltage - Reverse Standoff (Typ): 90V
Unidirectional Channels: 1
Moisture Sensitivity Level (MSL): --
Type: Zener
RoHS Status: RoHS Compliant
Part Status: Active
Description

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TVS (Transient Voltage Suppressor) diodes are a type of specialized semiconductor diodes used to protect electrical and electronic components from voltage spikes (also known as induced overvoltage). These diodes are designed to limit the voltage on a given line by rapidly conducting current off the line in the event of an induced overvoltage. The MSMLJ90AE3/TR application field and working principle is one such kind of TVS diode.

The MSMLJ90AE3/TR application field and working principle is designed for PCB general-purpose usage in a variety of different applications. This diode is capable of suppressing up to 11000 Watts peak pulse power. It is a three-terminal, 350V rated diode with a breakdown voltage of 13.5 V @ 8 A, and a high surge of 11 kA or 33 KA at 50A and 1ms respectively.

In operation, the diode is connected across a potential point (typically power or signal) that is prone to induce overvoltage. Under normal operation, the diode will be "open" and show no resistance (which is why this diode also has a very low leakage current of 0.1 μA). However, when an induced overvoltage is detected, the diode will become "closed" or conductive, thus diverting the current away from the potential point and reducing the voltage passing through it. This protection mechanism reduces the risk of component damage that can be caused by induced overvoltage.

The MSMLJ90AE3/TR application field and working principle incorporates special features such as peak pulse power derating, electrostatic protection and internal protection series elements to ensure a higher level of protection against induced overvoltage. It also has a low reverse leakage current of 0.1 μA, making it an ideal choice for applications that require low power consumption.

The MSMLJ90AE3/TR application field and working principle is suitable for a wide range of applications, including automotive, IT equipment (entry-level servers/storage/networking/workstations), consumer electronic devices, and industrial field. Its design and components are highly compatible with PCBs and ensure safe and reliable protection.

Overall, the MSMLJ90AE3/TR application field and working principle is a valuable addition to the TVS diode family. It offers the highest level of protection against induced overvoltage, while also ensuring a very low reverse leakage current and peak pulse power derating. The diode is designed to suit a wide range of different applications, from automotive to consumer electronics, making it an ideal choice for many engineers and technicians.

The specific data is subject to PDF, and the above content is for reference

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