MSQ1PJHM3/H Allicdata Electronics

MSQ1PJHM3/H Discrete Semiconductor Products

Allicdata Part #:

MSQ1PJHM3/HGITR-ND

Manufacturer Part#:

MSQ1PJHM3/H

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: 1A, 600V, MICROSMP, ESD PROTECTI
More Detail: Diode Standard 600V 1A Surface Mount MicroSMP (DO-...
DataSheet: MSQ1PJHM3/H datasheetMSQ1PJHM3/H Datasheet/PDF
Quantity: 1000
4500 +: $ 0.03969
9000 +: $ 0.03572
13500 +: $ 0.03175
31500 +: $ 0.02977
112500 +: $ 0.02646
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: Automotive, AEC-Q101, eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 650ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: MicroSMP
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The MSQ1PJHM3/H rectifier is a single diode device which provides a data transmission rate of up to 10 Mbps. The diode has an insulation resistance of up to 650V and a maximum forward surge capability of up to 4A. It is mainly used in low voltage rectification, motor drive and anti-parallel protection.

The main application field for this single diode includes AC-DC conversion, AC or DC-DC conversion, and power correction. It is also used in power control and monitoring, power converters, and in switching power supplies where it provides high-speed pulse width modulation (PWM). The diode provides excellent surge protection and is often used in parallel with other diodes for protection.

The working principle of a single diode is based on the P-N junction. A P-N junction is formed when two types of semiconductor material are placed in contact. The junction has a depletion region, formed when the conduction bands of both materials overlap and electrons in the connecting bonds start to recombine. This creates an electric field within the depletion region, which acts to block further current. When a reverse bias is applied, meaning an external voltage is applied to the diode in the opposite direction from its internal voltage, the junction will not conduct.

When a forward bias is applied, internally or externally, the electric field is destabilized, allowing current to flow through the junction. This forward bias creates a low voltage drop in the diode, which is much lower than the voltage drop in a regular semiconductor. This allows the diode to act as a rectifier, converting AC voltage into DC voltage.

The voltage of a single diode can also be controlled using gate-controlled devices. These devices can be used to increase or decrease the voltage drop in the diode, making it ideal for use in power converters and switching power supplies. Additionally, the diode can be used in combination with other diodes to provide better surge protection. By connecting the two diodes in parallel and then connecting the anode of one to the gate of the other, a high voltage surge will be blocked.

The MSQ1PJHM3/H single diode is an efficient device with a wide range of applications. It is suitable for low voltage rectification and is often used with other diodes for better surge protection. It is also used for high-speed pulse width modulation, power control and monitoring, and for AC or DC-DC conversion. The device has excellent insulation resistance and can provide reliable power conversion even in extreme environments.

The specific data is subject to PDF, and the above content is for reference

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