MSS1P4HM3_A/H Allicdata Electronics
Allicdata Part #:

MSS1P4HM3_A/HGITR-ND

Manufacturer Part#:

MSS1P4HM3_A/H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE SCHOTTKY 40V 1A MICROSMP
More Detail: Diode Schottky 40V 1A Surface Mount MicroSMP
DataSheet: MSS1P4HM3_A/H datasheetMSS1P4HM3_A/H Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: MicroSMP
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The MSS1P4HM3_A/H is a type of single rectifier diode. This diode has four rectifier anodes, and its rated forward current is 4A with a forward voltage of 40V. It has a maximum reverse current and reverse recovery time of 1mA and 10ns respectively. The MSS1P4HM3_A/H is used in a variety of applications such as controlling the flow of current and acting as a protection device.

The application field of this diode includes power supplies, medical equipment, automotive electronics, and communications equipment. It can be used as a switch in power supplies where it blocks current in one direction and allows current to pass in the other. It is also useful in rectifying AC to DC power and can be used to protect circuits from voltage/current surges.

The MSS1P4HM3_A/H is a single diode, meaning that there is only one junction between the positive and negative electrodes. This junction is known as the \'barrier\' and is responsible for controlling the flow of current in the diode. When forward-biased current is applied across the diode, electrons are able to pass through the junction, resulting in a low resistance path for current. However, when reverse-biased current is applied to the diode, the electrons are unable to pass through the junction, meaning that the path of current is blocked. This is known as the \'reverse-bias effect\'.

The working principle of the MSS1P4HM3_A/H is based on the diode structure. When a forward-biased current is applied across the device, the electrons are free to flow and the resistance of the diode is at its lowest. This allows the current to flow through the device quickly and efficiently. When reverse-biased current is applied, the electrons are blocked from passing through the diode and the resistance of the device increases. This provides a protection feature which prevents over-voltage and over- current from damaging connected circuits.

In summary, the MSS1P4HM3_A/H is a single rectifier diode which can be used in a variety applications to control the flow of current and act as a protection device. The device functions by using the forward-bias effect to provide a low resistance path for current, and the reverse-bias effect to increase the resistance and thus prevent over-voltage and over-current from damaging circuits.

The specific data is subject to PDF, and the above content is for reference

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