MT18LSDT6472AY-13ED2

Series:	--
Part Status:	Obsolete
Memory Type:	SDRAM
Memory Size:	512MB
Speed:	133MHz
Package / Case:	168-UDIMM

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MT18LSDT6472AY-13ED2 is a Solid State Drive (SSD) implemented with the latest memory technologies. It is specifically designed to be used in a variety of applications, including storage systems, data centers, and consumer electronics. With a powerful 2TB capacity, MT18LSDT6472AY-13ED2 is the perfect solution to upgrade or replace an existing system.The MT18LSDT6472AY-13ED2 is a high-performance, reliable memory module designed to meet the demands of enterprise users, data center applications, and applications that require RAID functionality. It is a dual-ported, error-correcting, full-featured SSD boasting low latency and outstanding stability. It utilizes the latest technologies to deliver superior read/write performance and data integrity. The module is engineered with a customized 4-channel MLC NAND Flash featuring Intelligent Block Management and Wear Leveling, as well as the advanced ECC technology.The main application field of the MT18LSDT6472AY-13ED2 is storage systems. It can be used to configure a RAID system for data redundancy and fault tolerance. The integrated ECC technology helps to ensure data integrity and reduce the risk of data loss due to defective NAND memory cells. The Intelligent Block Management and Wear Leveling technologies allow for improved storage management and reliable endurance. The MT18LSDT6472AY-13ED2 is also applicable to the consumer electronics industry, where it is used in embedded devices and personal computers.The working principle of the MT18LSDT6472AY-13ED2 is relatively simple. It is based on the NAND Flash memory architecture, which consists of a memory array connected to logic circuitry and a controller. The memory array is made up of several cells, each of which can store a single bit of data (0 or 1). The controller controls the operation of the NAND Flash memory and provides access to the stored data. The controller issues commands to read, write, and erase data from each individual cell. It also contains a buffer that prevents data loss even in the event of a power failure. Additionally, the controller can perform error correction, which helps to reduce the amount of bit errors encountered during operation.The MT18LSDT6472AY-13ED2 boasts low latency and excellent read/write performance, allowing users to experience a rapid system response. This is made possible by the advanced features of the module, such as the optimized 4-channel MLC NAND Flash and the on-board ECC technology. The module also offers enhanced reliability and data safety, thanks to its integration of Intelligent Block Management and Wear Leveling.The MT18LSDT6472AY-13ED2 is an excellent choice for a variety of applications. It provides reliable storage and data integrity for enterprise users, and its advanced features are useful in consumer electronics and in embedded devices. The low latency and excellent read/write performance make it an outstanding solution for storage systems. With its intuitive design and easy-to-use interface, the MT18LSDT6472AY-13ED2 is an ideal choice for memory modules.

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