MT35XL01GBBA4G12-0SIT TR

MT35XL01GBBA4G12-0SIT TR is a multi-level cell NAND Flash memory. It is a 3D technology with high speed and reliability, designed for high performance and low latency applications. It is also used in applications such as storing large amounts of data in devices such as digital cameras, smartphones, and other specialized digital systems.

Features and Specifications

The MT35XL01GBBA4G12-0SIT TR is a 64-Gigabit NAND Flash memory device. It features an MLC architecture with 128 pages and 32,768 bytes per page. It is rated for a maximum read/write speed of 108 MB/s and has a maximum read latency of 50 us. It is available in a variety of packages and is also compatible with most mobile system-on-chip architectures. Moreover, it has a controller embedded, which allows the user to control the memory accesses with various commands.

Application Field

The MT35XL01GBBA4G12-0SIT TR is well-suited for applications where large amount of storage space is required, as well as for applications that have a need for low latency access. It is well-suited for media applications such as video streaming and photography, as well as for applications that require large amounts of data accesses, such as gaming and financial applications.

In addition, the device can be used in a variety of embedded applications, such as those in the automotive, industrial, and medical fields. The device may be used in devices that require a reliable and high-performance NAND Flash solution, such as a web server, printer, or digital signage system.

Working Principle

The MT35XL01GBBA4G12-0SIT TR is based on a Multi-Level Cell (MLC) architecture. This means that each memory cell can store up to 4 bits. The device is divided into pages, and each page contains a large number of cells. Each page can be read, written, or erased using the appropriate commands.

The device uses a complex algorithm to determine how to write data to its cells in order to ensure maximum performance and reliability. The algorithm divides data into pages, and then writes the pages one by one. It then uses error-correcting codes to ensure data integrity and reliability. Finally, it stores the data in a non-volatile format to ensure permanent storage.

Conclusion

The MT35XL01GBBA4G12-0SIT TR is a multi-level cell NAND Flash memory device. It is designed for high-performance and low latency applications, and can be used in various applications such as mobile systems, video streaming, gaming, and embedded applications. The device is based on an MLC architecture and uses a complex algorithm for writing and reading data to ensure maximum performance and reliability.