MT35XL01GBBA2G12-0SIT TR Allicdata Electronics
Allicdata Part #:

MT35XL01GBBA2G12-0SITTR-ND

Manufacturer Part#:

MT35XL01GBBA2G12-0SIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: SERIAL NOR SLC 128MX8 TBGA DDP
More Detail: Memory IC
DataSheet: MT35XL01GBBA2G12-0SIT TR datasheetMT35XL01GBBA2G12-0SIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Packaging: Tape & Reel (TR) 
Part Status: Active
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the MT35XL01GBBA2G12-0SIT TR Memory

The MT35XL01GBBA2G12-0SIT TR memory is a DRAM technology developed by Micron that combines a high-speed interface, low power consumption, and versatile architecture. This type of memory is ideal for applications where performance, power, and size are critical factors, such as embedded systems, automotive applications, and portable electronics. It is one of the most common types of DRAM technology used today due to its high performance and wide range of applications.

Application field of the MT35XL01GBBA2G12-0SIT TR Memory

The MT35XL01GBBA2G12-0SIT TR memory is designed for use in a variety of applications. It is suitable for data-intensive applications such as industrial robotics, in-vehicle multimedia systems, digital signage, image processing, and Internet of Things (IoT) applications. It can also be used in embedded applications such as consumer electronics, medical electronics, security systems, and gaming devices. Additionally, it is suitable for in-memory computing purposes, providing significant performance boost for applications such as analytics, machine learning, and deep learning.

Working Principle of the MT35XL01GBBA2G12-0SIT TR Memory

The MT35XL01GBBA2G12-0SIT TR memory operates on the same principle as other types of DRAM. It stores data in a capacitor array which is organized into cells that can be addressed and read or written by a logic device, such as a processor. Each DRAM memory cell is composed of one capacitor and one transistor which are connected in series. Data is stored in the capacitor which retains an electric charge that can be read by the logic device.

The key to the fast performance of the MT35XL01GBBA2G12-0SIT TR memory is its high data transfer rate that is enabled by its high-speed interface. It also has low power consumption and a wide wordwide bus width, which allows a high number of bits to be transferred in one cycle. And because it is small and light, it is ideal for use in embedded systems, automotive applications, and portable electronics.

The MT35XL01GBBA2G12-0SIT TR memory can achieve very fast read and write speeds, making it suitable for applications that require high performance, such as gaming or data-intensive applications. It is also reliable and has a higher endurance rating than other types of DRAM, making it ideal for medical, industrial, or automotive applications.

Conclusion

The MT35XL01GBBA2G12-0SIT TR memory is an advanced and reliable form of DRAM technology that is ideal for a wide range of applications. It has a high data transfer rate, low power consumption, and high endurance rating, making it suitable for data-intensive and high-performance applications. It is also small and light, making it ideal for use in embedded systems, automotive applications, and portable electronics.

The specific data is subject to PDF, and the above content is for reference

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