MT48LC16M16A2FG-7E:D

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Memory

MT48LC16M16A2FG-7E:D is a type of dynamic random access memory (DRAM) device ideal for high density and above applications. It is designed to provide high-capacity and high-speed operation, making it an ideal choice for a wide range of applications.

The device is built from sixteen 1Mb, x 8 Wide and 16Mbit, x 4 Wide DRAM chips in a plastic 68-pin TSOP package. The MT48LC16M16A2FG-7E:D provides a wide range of features and performance benefits, such as low power consumption, fast read and write cycle times, and use of less power for refresh operations. It also supports page mode and burst operation.

The device also features a reliable, self-refresh circuitry that allows the DRAM to remain active and stable while the system is in idle or dormant state. The device is designed to be used in consumer electronics, security monitoring systems, automotive computers, gaming systems, industrial automation, embedded systems and other various applications.

When it comes to working principles, the MT48LC16M16A2FG-7E:D device works by using two CMOS clocks, a row address latch, a write-enable latch, and the associated row and column decode logic. It also employs two data access buses, one for reading and one for writing. When the row address is applied to the device, the associated row address latch is triggered, which in turn sets the row decode logic to the correct memory cell row location. The column address select logic is then activated, which locates and identifies the proper memory cell column. The write enable latch is then triggered, initiating the writing of new or updated data to the proper memory cell column.

Once the address is identified the data is read or written to and from the appropriate memory cell. The data access operation makes use of the externally connected address bus which provides the address values to the chip. The data within the memory cells is stored in a DRAM array. When the memory cells are read, the data stored in them is output to the address bus as well as the write enable latch provided to the device.

The three clock signals at the MT48LC16M16A2FG-7E:D device are all subjected to the same clock frequency. The frequency of this clock is determined by the speed of the DRAM Cell array, which is the frequency at which the data is accessed. The maximum clock frequency of the device is 100 MHz, and at this speed the device supports a maximum data access speed of 66 MHz.

Thus, the MT48LC16M16A2FG-7E:D is a high capacity, high speed DRAM device which can be used in a variety of applications such as embedded systems, automotive computers, security monitoring systems, gaming systems, industrial automation, and consumer electronics. It works by utilizing two CMOS clocks, a row address latch, a write-enable latch, and associated row and column decode logic, allowing data to be written and read from the memory cells. The device also supports high speed data access of up to 66 MHz, making it an ideal choice for applications that require high speed data access.

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