MT48H32M16LFBF-6:B

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT48H32M16
Supplier Device Package:	54-VFBGA (6x9)
Package / Case:	54-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	512Mb (32M x 16)
Technology:	SDRAM - Mobile LPSDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tray

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Memory

MT48H32M16LFBF-6:B is a component used for memory in electronic devices. It is a static random access memory chip that was developed by Micron Technology Inc. It is a 16 megabit device that is mainly used in low-power, low-cost applications and is widely used in embedded systems and automotive applications.The MT48H32M16LFBF-6:B utilizes a specific memory architecture known as dual-ported synchronous dynamic random access memory (SDRAM). This architecture allows for simultaneous access of data in both read and write cycles, making it suitable for applications where data needs to be accessed quickly. The device also has a low power consumption, making it ideal for mobile and battery-powered systems.The physical architecture of MT48H32M16LFBF-6:B consists of two SRAM arrays, each consisting of four million 16 bit words. These two SRAM arrays are organized into 8 banks, each of which is further divided into 4 banks that connect to a burst counter and control logic. There are also two multiplexers that are used to control data and address paths.The MT48H32M16LFBF-6:B also contains a refresh counter and an auto-refresh controller that allow the chip to refresh and retain data without external intervention. The device is capable of supporting up to an 8-word data page, which is divided into 4 word rows. The 8-bit page address and the 4 most significant bits of the row address are stored in the device\'s registers, allowing for fast access to stored data.The device is also equipped with several control registers that can be accessed using the appropriate command sequence. These control registers allow for such functions as read/write timing adjustment and power management control. In addition, the device also has several status registers that can be used to monitor and control the device\'s operation.In terms of working principle, the MT48H32M16LFBF-6:B is divided into two sections, namely, the data and the address buses. Data is stored in memory cells or columns and address is sent through the address bus to identify which cell the data is to be retrieved or stored. When an address is sent to the device, the address bus is decoded and the DDR controller moves the read and write data buffers. The read data is then passed to the buffer and the write data is stored into the register.Therefore, the MT48H32M16LFBF-6:B is a low-power, low-cost, high-performance memory chip that is capable of supporting a wide range of applications. It is widely used in embedded systems and automotive applications due to its low power consumption and fast access time. The device is also equipped with control and status registers, as well as a refresh controller, that allows for improved data retention without the need for external intervention. Furthermore, the device utilizes a dual-ported synchronous dynamic random access memory architecture that provides simultaneous access of data in both read and write cycles, allowing for fast data retrieval and storage.

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