MT48H8M32LFB5-75:H TR

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The MT48H8M32LFB5-75:H TR is a high-density synchronous dynamic random access memory (SDRAM) module developed by Mitsubishi Electric. This device is specifically designed to satisfy the increasing demand for memory in the consumer and embedded computing markets. It is a member of Mitsubishi\'s Hi-Speed LPDDR3 family of DRAM products that feature high clock speeds, low power consumption, and optional error correction code (ECC) support. This article will explore the application field of MT48H8M32LFB5-75:H TR and its working principle.

Application Field:

The MT48H8M32LFB5-75:H TR is a versatile device that finds application in numerous arenas. It is particularly popular among embedded computing engineers who require high-speed data transfers that comply with low-power requirements. They are ideal for use in portable devices that require high throughput and energy efficiency, such as smartphones, digital cameras, and media players. Other popular applications include automotive, digital signage, and surveillance systems.

The dynamic random access memory (DRAM) module features low-power operation and supplies up to eight banks of synchronous memory. It has 32 megabytes of total storage and has a package size of 10x12.5mm. This tiny device can offer a maximum data rate of 1615 megabytes per second, making it a great choice for high-bandwidth applications.

Working Principle:

The MT48H8M32LFB5-75:H TR is a synchronous device that uses a clock signal to synchronize data transfers. It has a dual-bank 28nm Hynix technology that supports LPDDR3, DDR3, and DDR2 standards. The module has an active power consumption of around 500mW. It utilizes QoS (Quality of Service) and other advanced features such as write and read latency, burst length, and affinity.

The Hynix technology employed by the DRAM module enables low voltage operation and high-speed performance. It also features specific functions that can monitor and correct a wide range of critical errors to ensure data integrity even in the most demanding applications. The module also features a SDRAM command set along with two burst modes allowing it to adjust to different operating frequencies.

The32 megabytes of total storage array of the MT48H8M32LFB5-75:H TR is divided into eight banks of four megabytes each. Each bank has two mega blocks that can be independently accessed. The device has an x16 data bus width and uses LVTT (Low Voltage Toggle Type) technology for data transmission. It also supports cyclic redundancy check (CRC) and parity error detection.

Conclusion:

The MT48H8M32LFB5-75:H TR is a high-performance and low-power dynamic random access memory (DRAM) module. It is designed to meet the requirements of modern embedded computing systems and offers an optimal solution for applications demanding high throughput and energy efficiency. The device has an impressive data rate of up to 1615 megabytes per second and employs QoS and ECC support for data integrity. It also uses advanced features such as burst length, write and read latency, and affinity.

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