MT48LC8M16A2B4-6A AIT:L TR

Write Cycle Time - Word, Page:	12ns
Base Part Number:	MT48LC8M16A2
Supplier Device Package:	54-VFBGA (8x8)
Package / Case:	54-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	3 V ~ 3.6 V
Memory Interface:	Parallel
Access Time:	5.4ns
Series:	Automotive, AEC-Q100
Clock Frequency:	167MHz
Memory Size:	128Mb (8M x 16)
Technology:	SDRAM
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction to MT48LC8M16A2B4-6A AIT:L TR

The MT48LC8M16A2B4-6A AIT:L TR is a small-outline DRAM memory module that provides memory storage and data retrieval capabilities. This module is widely used in applications such as industrial, automotive and medical systems. The module is designed with an AIT:L (Advanced Interface Technology for Low Power) protocol that enables high-speed transfers with low power consumption. The MT48LC8M16A2B4-6A AIT:L TR module is a very reliable memory module capable of supporting a wide range of applications.

Application Field

The MT48LC8M16A2B4-6A AIT:L TR is designed for use in applications with demanding performance requirements, such as industrial automation systems, automotive systems, medical systems and embedded systems. The module is also ideal for applications that require multiple memory channels and support for Error Correcting Code (ECC) memory protection. Its small outline design makes it suitable for space-sensitive applications. The module is also optimized to handle high speed data transfers with low power consumption.

Working Principle

The MT48LC8M16A2B4-6A AIT:L TR module operates with an AIT:L protocol. The protocol enables high speed data transfers with low power consumption. The MT48LC8M16A2B4-6A AIT:L TR module utilizes a single-printed circuit board which contains the memory cells and ECC circuitry. The memory cells are organized into 256-byte blocks, with each block consisting of 64 rows of 4 bytes each. Each memory block also includes an 8-bit Error Correction Code (ECC) to detect and correct single-bit errors.The memory cells are organized into 4 memory channels. Each channel contains 64 rows of 128 bytes each. The module also includes a read/write buffer and a refresh counter. The refresh counter ensures that the memory cells are regularly refreshed, providing reliable operation and data integrity. The module also utilizes bus-skew compensation and burst address recognition to ensure data signals are correctly distributed for high speed transfers. The module is designed for multiple system configurations. It supports multiple power supplies and is configurable for x8 and x16 operation. It has a 3.3V operating voltage and an asynchronous read burst capability up to 4.2 the speed of standard DRAM.

Conclusion

The MT48LC8M16A2B4-6A AIT:L TR is a small-outline DRAM memory module that provides memory storage and retrieval capabilities. It is designed with an AIT:L protocol that enables high speed transfers with low power consumption. The module is ideal for applications with demanding performance requirements, such as embedded systems, industrial automation systems and medical systems. The module is optimized to handle multiple memory channels and support ECC memory protection. It is also configurable for x8 and x16 operation and has a 3.3V operating voltage. Its small outline design, bus-skew compensation and burst address recognition make it suitable for space-sensitive applications that require reliable memory storage and data retrieval capabilities.

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