MT48LC8M16A2P-7E IT:G TR Allicdata Electronics
Allicdata Part #:

MT48LC8M16A2P-7EIT:GTR-ND

Manufacturer Part#:

MT48LC8M16A2P-7E IT:G TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 128M PARALLEL 54TSOP
More Detail: SDRAM Memory IC 128Mb (8M x 16) Parallel 133MHz 5....
DataSheet: MT48LC8M16A2P-7E IT:G TR datasheetMT48LC8M16A2P-7E IT:G TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 14ns
Base Part Number: MT48LC8M16A2
Supplier Device Package: 54-TSOP II
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 5.4ns
Series: --
Clock Frequency: 133MHz
Memory Size: 128Mb (8M x 16)
Technology: SDRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

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Memory is an integral part of computing, and traditional methods for remembering data are still used in many applications. However, with the need for ever-increasing data storage and retrieval capacities, memory devices have been evolving. One such device is the MT48LC8M16A2P-7E IT:G TR, which is a type of dynamic random access memory (DRAM). This device utilizes a combination of DRAM cell array and transistor-transistor logic (TTL) integrated circuitry to enable fast and efficient data storage and retrieval.

The MT48LC8M16A2P-7E IT:G TR, as a type of memory, is used in many areas. It is especially popular in applications related to networking and cloud computing. Because of its capacity, it can be used in the fields of mobile computing, supercomputing, automotive applications, autonomous undersea vehicles and aerospace systems. Additionally, its use is common in embedded systems, interactive gaming systems and parallel computing architectures.

The integration of the DRAM cell array and the TTL circuitry of the MT48LC8M16A2P-7E IT:G TR allows for both fast data storage and efficient data retrieval processes. It operates through a cycle of storing or writing data, and then retrieving or reading the data. The cycle begins with a read/write signal sent from the CPU. During the write cycle, the data stored in the CPU is sent to the memory device and written into the appropriate memory cell. In the read cycle, the data stored in the cell is sent to the CPU for retrieval. This process is repeated constantly, providing the necessary data to the CPU.

The memory device also features high speed features, such as fast page switching and burst mode support. Fast page switching allows the device to switch between memory addresses almost instantaneously. Burst mode support enables the device to rapidly send multiple words of data. The combination of these features allows data transfer rates of up to 6.25 MB/s. Additionally, the device also supports ECC (Error Correction Code) which enables data to be accurately stored and retrieved.

The MT48LC8M16A2P-7E IT:G TR is a memory device which offers a combination of fast data storage and efficient data retrieval. This device is suitable for various applications, such as networking and cloud computing, mobile computing, supercomputing, automotive applications, embedded systems, interactive gaming systems and parallel computing architectures. Through its efficient and fast data retrieval and storage, the device offers high speed features and supports ECC, which ensure accurate data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference

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