MT48LC8M16LFB4-8 IT:G TR

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The MT48LC8M16LFB4-8 IT:G TR is a component in the memory family, specifically used in memory applications requiring high performance, low power consumption, and in-system programming capability. This component is known for its outstanding reliability, high speed response, and excellent data retention characteristics.

The MT48LC8M16LFB4-8 IT:G TR component offers a 256 Mbit (16 Megabit) × 16 density Dynamic Random Access Memory (DRAM). This memory type is based on Fully Synchronous Burst architecture, where bus transactions are synchronized by the device clock. All memory functions are reversible and self-timed, allowing direct read and write access to the device. The operating voltage of the device is 3.3V, while the temperature range of storage and operating conditions is -40°C to +85°C.

The MT48LC8M16LFB4-8 IT:G TR device employs a burst oriented architecture. This means that block Bursts of data are specified by the Row Address, with Column address providing initial address and then incrementing for each transaction. To reduce idle cycles, a burst length of 8 words can be specified. By varying the Column address, any length burst can be specified to facilitate efficient transfer of data. This Burst Disable mechanism is user selectable.

The Burst Counter circuit of the MT48LC8M16LFB4-8 IT:G TR device ensures that the addresses within the burst remain the same for each clock cycle. Data is latched on the rising edge of the device clock. This allows for maximum data throughput, with little need for user intervention during transfers.

The device also employs an Improved Address and O/E Change Latency, allowing faster random columns accesses. This Advanced Page Mode access provides a three clock cycle latency, providing improved system performance.

The MT48LC8M16LFB4-8 IT:G TR device features a programmable Output Enable function, which is user configurable. This allows the user to put the device in a low power output disabled state, while maintaining the address and control signals at the output pins.

The device also includes an Auto Refresh Cycle, as well as Low Cycle Latency and Self-refresh Mode. A sense amplifier activating process is also employed to sense whether data has been correctly stored in the DRAM Cells.

As far as application fields are concerned, the MT48LC8M16LFB4-8 IT:G TR device is widely used in memory applications requiring high performance, low power consumption, and in-system programming capability. The device is frequently used in memory and storage applications such as PCs, gaming systems, digital cameras and cell phones, as well as other embedded systems that require high performance and excellent reliability.

The MT48LC8M16LFB4-8 IT:G TR provides an outstanding combination of features to ensure the best performance and reliability in memory and storage applications. Its high speed response and excellent data retention characteristics make it a perfect addition to any embedded system requiring high performance and reliable memory operations.

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