MT48LC8M32LFB5-10 TR Allicdata Electronics
Allicdata Part #:

MT48LC8M32LFB5-10TR-ND

Manufacturer Part#:

MT48LC8M32LFB5-10 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 256M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Par...
DataSheet: MT48LC8M32LFB5-10 TR datasheetMT48LC8M32LFB5-10 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT48LC8M32
Supplier Device Package: 90-VFBGA (8x13)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 7ns
Series: --
Clock Frequency: 100MHz
Memory Size: 256Mb (8M x 32)
Technology: SDRAM - Mobile LPSDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory

Memory is a type of computer data storage which is used to store and access data in the form of numbers or words. It is essential for any sort of computing, and essential for many devices used in day-to-day life.

One type of memory technology is the MT48LC8M32LFB5-10 TR, which is a leading non-volatile storage device. This type of memory is particularly well-suited for applications requiring read/write speeds, reliability and longevity. In particular, this memory is designed to work in applications where power savings and durability is paramount.

Application Field

The MT48LC8M32LFB5-10 TR is most commonly used in applications such as handheld devices, routers, modems, sensors, medical equipment, telecom systems, cellular telephony, navigation systems, automotive computers, and 2D barcode scanners. In each of these applications, the non-volatile storage capabilities of the device are critical to the success of the application. Additionally, the device’s power saving and reliability are also important factors in choosing it as the memory of choice.

Working Principle

The MT48LC8M32LFB5-10 TR is built on a three transistor stacked cell (TTSC) architecture, which is used to achieve larger capacity and superior speed performance. This type of architecture works by writing data to a set of three transistors, which are then connected in series to create a memory cell. The data is then written again to confirm the operation is successful. The three transistor architecture also provides for greater power savings, as the device’s read/write currents are significantly lower than those of other memories.

To further maximize the device’s power savings and reliability, it is designed with a single-pass write/erase fashion. This means that data is written directly to a specific location in the non-volatile storage, without the need for separate read/write cycles. This feature significantly reduces power consumption and increases the overall durability of the device.

Additionally, the device’s on-die substrate voltage scrambler (ODSV) provides an additional layer of reliability. This scrambler works by randomly reversing the polarity of the array. This prevents potential data corruption due to electrostatic discharge and other electrical anomalies.

In summary, the MT48LC8M32LFB5-10 TR is a leading non-volatile storage device which is specifically designed for applications where power savings and reliability are key factors. Its three transistor stacked cell architecture provides for greater capacity and speed performance, while its single-pass write/read cycles promote greater energy savings and durability. Lastly, the on-die substrate voltage scrambler ensures further data security and integrity.

The specific data is subject to PDF, and the above content is for reference

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