MT48V4M32LFF5-8:G TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT48V4M32
Supplier Device Package:	90-VFBGA (8x13)
Package / Case:	90-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	2.3 V ~ 2.7 V
Memory Interface:	Parallel
Access Time:	7ns
Series:	--
Clock Frequency:	125MHz
Memory Size:	128Mb (4M x 32)
Technology:	SDRAM - Mobile LPSDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Memory is one of the most important components in a computer system. Memory stores data, instructions and intermediate results, as well as performs various operations on these. The MT48V4M32LFF5-8:G TR is a double data rate synchronous dynamic random access memory (DDR SDRAM) device, typically used for computer memory applications. In this article, we will discuss the application field and the working principle of the MT48V4M32LFF5-8:G TR.The MT48V4M32LFF5-8:G TR is a high performance, low-power DDR SDRAM device, designed for data storage and retrieval. This device is suitable for a wide range of applications, such as in PCs, servers, networking and embedded systems. The MT48V4M32LFF5-8:G TR supports a data transfer rate of up to 2.4 GHz, and offers peak bandwidth of up to 10 Gbps. This device uses a two-bank architecture, which increases system performance and power efficiency.The MT48V4M32LFF5-8:G TR is a synchronous memory device, meaning that its operations are synchronized to an external clock signal. This device supports burst lengths of up to 128 bits and can perform up to eight separate read or write operations in a single cycle. The device also supports a number of different operating modes, including page-open burst, page-close burst, page-open interval burst, page-close interval burst, and more.The MT48V4M32LFF5-8:G TR features a self-refresh mode which allows the device to maintain data integrity and preserve power when idle. This mode can be set to either periodically refresh the device, or to enter an idle state when inactive. The device also supports error detection and correction (ECC) to reduce the chance of data corruption in the memory cell array.To ensure system reliability, the MT48V4M32LFF5-8:G TR incorporates a number of advanced technologies, such as dynamic hot spot warning, adaptive power management, dynamic address mirroring, and thermal protections. These features help to reduce system contention and improve system stability.The MT48V4M32LFF5-8:G TR operates using single 2.5V supply voltage, which is further divided into 10 internal voltage supplies. These power supplies are used to power different logic circuits within the device. The device also features a built-in power-on reset (POR) circuit, which initiates the device operations once power is applied.In conclusion, the MT48V4M32LFF5-8:G TR is a high-performance, low-power DDR SDRAM device, designed for a variety of computer applications, such as PCs, servers, networking, and embedded systems. This device supports burst lengths of up to 128 bits and can perform up to eight separate read or write operations in a single cycle. It also utilizes a range of advanced technologies to ensure reliable performance and increased power efficiency.

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