MT48V8M16LFB4-8:G TR Allicdata Electronics
Allicdata Part #:

MT48V8M16LFB4-8:GTR-ND

Manufacturer Part#:

MT48V8M16LFB4-8:G TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 128M PARALLEL 54VFBGA
More Detail: SDRAM - Mobile LPSDR Memory IC 128Mb (8M x 16) Par...
DataSheet: MT48V8M16LFB4-8:G TR datasheetMT48V8M16LFB4-8:G TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT48V8M16
Supplier Device Package: 54-VFBGA (8x8)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3 V ~ 2.7 V
Memory Interface: Parallel
Access Time: 7ns
Series: --
Clock Frequency: 125MHz
Memory Size: 128Mb (8M x 16)
Technology: SDRAM - Mobile LPSDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory, in a modern computing context, refers to a device used for storage and retrieval of data or instruction used in computers. The terms “memory”, “storage”, and “persistent storage” are often used interchangeably, despite some subtle differences between them.

The purpose of memory is to store data that can be retrieved by a processor. This includes program code and data used by programs. Memory is usually divided into two categories: volatile (short-term) and non-volatile (long-term) memory. Non-volatile memory is typically used for program code, which is retained only when power is available to the device, whereas volatile memory holds data that is lost when power is disrupted. It is a crucial component in most computing systems.

MT48V8M16LFB4-8:G TR is an example of modern high-speed, low-power memory device that is widely used in the fields of data storage and applications. It is one of the most advanced memory solutions available today and is designed to meet the needs of high-performance systems. It provides 8 gigabits of dynamic random-access memory (DRAM) in a single package with a ratio of speed to power of more than 10Mbps/mA. The device can also work with a supply voltage range of 1.6v to 3.6v, making it suitable for portable devices.

MT48V8M16LFB4-8:G TR is well-suited for embedded applications such as automotive electronics, telecommunications, industrial automation, and consumer electronics. The device is also ideal for applications that require high speed, low power consumption, and reliable performance while maintaining compatibility with a wide range of memory standards. It also has a low-power write protection feature that ensures data privacy in applications.

In terms of its working principle, the MT48V8M16LFB4-8:G TR is a synchronous dynamic random-access memory (SDRAM) device. It is composed of 8 gigabits of memory that are organized as two banks of 2 gigabits each. It can operate with a frequency of up to 133MHz and has a burst mode that enables it to fetch 8 data words per clock cycle. The data can also be written or read from the memory in single, double, quad, or octal data transfers. The device also supports page mode, which allows faster access to the same page of memory and can be used to reduce access latency.

MT48V8M16LFB4-8:G TR is a reliable and high-performance memory device, with features that make it suitable for a wide range of applications. Its low power consumption and high speed make it an ideal choice for embedded systems. Its two banks of 2 gigabits each also make it suitable for systems that require large amounts of data storage. Furthermore, its support for various data transfer modes makes it a versatile solution for data-intensive applications.

The specific data is subject to PDF, and the above content is for reference

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