MT51K256M32HF-60 N:B TR Allicdata Electronics
Allicdata Part #:

MT51K256M32HF-60N:BTR-ND

Manufacturer Part#:

MT51K256M32HF-60 N:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC RAM 8G PARALLEL 1.5GHZ FBGA
More Detail: SGRAM - GDDR5 Memory IC 8Gb (256M x 32) Parallel 1...
DataSheet: MT51K256M32HF-60 N:B TR datasheetMT51K256M32HF-60 N:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Clock Frequency: 1.5GHz
Write Cycle Time - Word, Page: --
Memory Interface: Parallel
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Description

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Memory is at the heart of today\'s technological advancement throughout the world. One such type of memory is the Micron Technology Inc MT51K256M32HF-60 N:B TR. This type of memory is commonly used in computers and other digital devices due to its high performance characteristics. This article will provide an overview of the MT51K256M32HF-60 N:B TR’s application field and working principle.

The MT51K256M32HF-60 N:B TR is part of Micron Technology’s Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) family. It is a 64-bit, fully synchronous DIMM (Dual In-line Memory Module) memory module with a maximum data transfer rate of up to 1666 Megatransfers per second (MT/s). The memory module features a total of 8 memories chips, each chip having a capacity of 8 Gbit (Gigabits). The MT51K256M32HF-60 N:B TR is typically used in high-performance applications, such as communications, gaming and server applications, as well as embedded computing applications such as automotive infotainment systems.

In terms of its working principle, the MT51K256M32HF-60 N: B TR operates by using an integrated circuit which includes an array of memory cells. The memory cells store binary data in the form of high and low levels of voltage. Each cell can store one bit of information (either 0 or 1). The memory module reads and writes data by transferring the voltage levels between memory cells and the external pins on the module. The module supports double data rate transfers, which means that data can be transferred twice in one clock cycle, thus improving overall system performance.

Overall, the MT51K256M32HF-60 N:B TR offers high performance in applications where maximum speed and large memory capacity are required. It is also very reliable, with a high data transfer rate and low power consumption. The memory module provides a cost-effective solution for applications where large capacity and high performance is needed. Furthermore, its working principles make it an ideal choice for various high-performance applications, such as communications, gaming and server applications, as well as embedded computing applications such as automotive infotainment systems.

The specific data is subject to PDF, and the above content is for reference

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