MTD3010N Allicdata Electronics
Allicdata Part #:

1125-1004-ND

Manufacturer Part#:

MTD3010N

Price: $ 5.79
Product Category:

Sensors, Transducers

Manufacturer: Marktech Optoelectronics
Short Description: PHOTO DIODE 900NM DOME CLR TO-18
More Detail: Photodiode 900nm 16°
DataSheet: MTD3010N datasheetMTD3010N Datasheet/PDF
Quantity: 163
1 +: $ 5.26050
10 +: $ 4.76280
25 +: $ 3.77068
100 +: $ 3.17520
Stock 163Can Ship Immediately
$ 5.79
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Wavelength: 900nm
Color - Enhanced: Infrared (NIR)/Red
Spectral Range: 400nm ~ 1100nm
Diode Type: --
Responsivity @ nm: 0.2 A/W @ 450nm
Response Time: --
Voltage - DC Reverse (Vr) (Max): 30V
Current - Dark (Typ): 10nA
Active Area: --
Viewing Angle: 16°
Operating Temperature: -30°C ~ 100°C
Mounting Type: Through Hole
Package / Case: --
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Optical Sensors - Photodiodes have long been used to convert light energy into electric current or voltage. A photodiode is a type of photoelectric device consisting of a semiconductor p-n junction. Photodiodes can respond to visible, infrared, and ultraviolet light and can be used for a variety of applications. The MTD3010N is a photodiode specifically designed for a variety of applications.

The MTD3010N has a wide range of application fields including light detection, light measurement, spectrum analysis, infrared energy sensing, fluorescence detection, dark current measurement, and pulse width modulation (PWM). Due to its high sensitivity, the MTD3010N can be used in systems where low levels of light need to be detected and monitored. The photodiode also provides stability over a wide temperature range and can operate from very low light levels up to very high intensity, making it suitable for a range of applications.

The MTD3010N has a variety of features, including a high Quantum Efficiency (QE) of 0.9. The photodiode also has a wide spectral response, ranging from 200 to 1100nm. The device has a high signal-to-noise ratio, making it suitable for applications that require accurate, reliable measurements. Additionally, the MTD3010N has a high dynamic range, allowing for measurements of both low and high light levels. The device also has low-temperature coefficients, making it suitable for applications requiring accurate and consistent measurements over a wide temperature range.

The working principle behind the MTD3010N is based on the photo-electric effect. When light strikes a surface, electrons in the material are excited by the light energy and jump into higher-energy orbital levels. The electrons will then move in a direction dependent on the orientation and type of material of which the surface consists. In the case of the MTD3010N, the electrons will move through the p-n junction of the photodiode, generating a measurable current. The intensity of the current is proportional to the intensity of the light.

The MTD3010N is designed with robust performance in mind, so it can be applied to a variety of applications that require accurate and reliable results. The photodiode is an excellent choice for applications such as light detection, light measurement, spectrum analysis, infrared energy sensing, fluorescence detection, dark current measurement, and pulse width modulation (PWM). By combining the high QE, wide spectral range, high dynamic range, and low temperature coefficients of the MTD3010N, designs can be implemented for applications requiring accurate and reliable measurements.

The specific data is subject to PDF, and the above content is for reference

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