Allicdata Part #: | MTD3055VTR-ND |
Manufacturer Part#: |
MTD3055V |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 12A DPAK |
More Detail: | N-Channel 60V 12A (Ta) 3.9W (Ta), 48W (Tc) Surface... |
DataSheet: | MTD3055V Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.59144 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.9W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The MTD3055V is a voltage-controlled FET commonly used in amplification circuits, switching circuits and power control applications. The MTD3055V is a power transistor that is used for driving loads such as motors, lamps and relays in circuits. It is mainly a voltage-controlled device that is used to further amplify and provide power to the circuits. It belongs to the family of field-effect transistors and is widely used in various industrial, automotive and consumer applications.
The MTD3055V is a single N-channel enhancement mode FET. It is widely used due to its low on-resistance, low capacitance and low gate threshold voltage. It also offers a low drain-source breakdown voltage and low current to voltage conversion rate when compared to other FETs. The MTD3055V is also a high-voltage device. It can be operated up to 25V and can improve the efficiency of switching circuits.
The MTD3055V is typically used as an enhancement-mode MOSFET, but can also be used as a depletion-mode MOSFET with external biasing. The MTD3055V is closely related to other MOSFETs and can be used in combination with them for optimised strength and flexibility in appliance designs. The MTD3055V can be used in low-voltage power control applications and high-reliability signal control circuits. It is also suitable for signal control amplifiers, switching circuits and LED lighting control.
The FET is constructed with a substrate, a source, a gate and a drain. The source and drain form a channel and the voltage applied to the gate controls the amount of current that can pass through the channel. When a positive voltage is applied to the gate, the channel is drawn towards the gate. This reduces the resistance between the source and the drain and allows more current to pass through the channel. Conversely, when a negative voltage is applied to the gate, the channel is repulsed and the resistance between the source and drain is increased, thus reducing the amount of current that can pass through the channel.
The MTD3055V is a cost-effective and reliable device that is widely used in many practical applications. It provides good performance in terms of switching speed, power dissipation, leakage current and operating temperature. It is also a highly reliable device that can withstand harsh operating conditions. Due to its low on-resistance, low capacitance and low gate threshold voltage, the MTD3055V is ideal for many power control applications and power supply designs.
The MTD3055V is easy to use and offers excellent performance and reliability. The device is available with various technical specifications depending on the requirements of the application. It is an excellent choice for applications requiring high switching speed, cost-efficiency and robustness.
The specific data is subject to PDF, and the above content is for reference
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