MTFC8GLGDQ-AIT Z

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MTFC8GLGDQ-AIT Z application field and working principle

Memory is essential to computers and other electronic devices, and so there is great interest in both the application and working principles of memory chips – particularly the MTFC8GLGDQ-AIT Z. In this article, we will take a look at the application field and working principle of the MTFC8GLGDQ-AIT Z.

Overview of the MTFC8GLGDQ-AIT Z

The MTFC8GLGDQ-AIT Z is a 4 Gb multi-level cell NAND flash memory chip developed by Japanese semiconductor company Toshiba. It is designed for use in embedded systems, and is the successor to the popular MTFC4GLDEA-AIT Z chip. The MTFC8GLGDQ-AIT Z chip has a 32 Gb max page size, which is four times larger than the previous generation chip. Additionally, it features a power-friendly “burst transfer mode”, which allows faster data throughput without requiring increased power consumption.

Application Field of the MTFC8GLGDQ-AIT Z

The MTFC8GLGDQ-AIT Z is ideal for a wide range of applications, including but not limited to: medical instrumentation, digital video recorders, digital cameras, network storage devices, consumer devices, automotive and consumer embedded device applications. It is especially well suited for applications that require large memory capacity, such as video, audio and image processing.

The MTFC8GLGDQ-AIT Z is also ideal for personal computing applications and consumer electronics, as it offers a high degree of reliability and cost effectiveness. It is also well suited for both consumer and enterprise storage applications, as its advanced error correction circuitry allows it to easily support demanding enterprise storage environments.

Working Principle of the MTFC8GLGDQ-AIT Z

The MTFC8GLGDQ-AIT Z utilizes a floating gate cell architecture, whereby each cell has two gates that are separated by a floating gate. This architecture allows for increased performance, reliability and scalability, while also offering an expanded range of applications that the chip can be used for. In addition, the floating gate cell architecture offers features such as high endurance, low program to erase (P/E) cycle times, and low write/read times.

The chip is built on a 32 nm process node, using a 9-channel design. This allows the MTFC8GLGDQ-AIT Z to support high-speed multi-level cell input/output (I/O) with excellent read/write performance. It also features an integrated controller for wear-leveling and ECC support, thus enabling highly reliable operation.

Conclusion

The MTFC8GLGDQ-AIT Z is a reliable and cost-effective 4 Gb multi-level cell NAND flash memory chip, ideal for a wide range of applications. It utilizes a floating gate cell architecture, with an advanced controller and error correction circuitry. The chip is built on a 32 nm process node, allowing it to support both high-speed multi-level cell I/O and excellent read/write performance.

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