MTFC64GAPAKEA-WT ES TR Allicdata Electronics
Allicdata Part #:

MTFC64GAPAKEA-WTESTR-ND

Manufacturer Part#:

MTFC64GAPAKEA-WT ES TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512G MMC
More Detail: FLASH - NAND Memory IC 512Gb (64G x 8) MMC
DataSheet: MTFC64GAPAKEA-WT ES TR datasheetMTFC64GAPAKEA-WT ES TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: e•MMC™
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Write Cycle Time - Word, Page: --
Memory Interface: MMC
Voltage - Supply: --
Operating Temperature: -25°C ~ 85°C (TA)
Description

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Memory is a vital component of any computer system, whether it be server or desktop. In order to keep data persistent, various types of high speed memory devices are utilized. The MTFC64GAPAKEA-WT ES TR memory device is a specialized memory module designed specifically for intense mission critical environments, such as server applications or mission-critical systems. This article will discuss the application field and working principle of the MTFC64GAPAKEA-WT ES TR memory device.

The Application Field of the MTFC64GAPAKEA-WT ES TR Memory Device

The MTFC64GAPAKEA-WT ES TR is designed specifically for enterprise servers and mission-critical applications. It is an ultra-high-speed memory device that provides reliable storage for critical data that must be accessed quickly. It is designed to be able to handle extensive processing loads, and is capable of withstanding conditions such as icing, vibration, and extreme temperatures. This makes it ideal for mission-critical applications in which data must be accessed and processed quickly and reliably, such as in web servers, transaction processing systems, and database systems.

The Working Principle of the MTFC64GAPAKEA-WT ES TR Memory Device

The MTFC64GAPAKEA-WT ES TR is a dynamic RAM (DRAM) device. DRAM is a form of memory that does not hold data permanently; instead, the data stored in DRAM is retained as long as the power is applied. At the most basic level, DRAM operates on the concept of storing electrical charge, either in the form of 0s or 1s, to represent the binary digits of data. A system of capacitors is used to store the electric charge, and a system of transistors is used to control the data.

In order to retrieve data stored in DRAM, the charge must be read, or accessed. This is done by sending a read signal to the DRAM, which causes the voltage in the DRAM to switch. This causes the stored charge to be discharged, and the capacitors to reset. The data is then transmitted to the main system.

The MTFC64GAPAKEA-WT ES TR memory device uses advanced technologies to increase the speed at which the data can be accessed and retrieved. It utilizes Error Correction Code (ECC) to ensure data integrity and reliability. ECC is a form of data control that uses sophisticated algorithms to detect and correct errors that may occur in transmitting data. Additionally, the device employs a patented "Memory On-Die Cooling" technology, which helps reduce power consumption, enhance data integrity and increase speed.

Conclusion

The MTFC64GAPAKEA-WT ES TR memory device is a specialized memory module designed specifically for mission-critical applications. Its advanced technologies and rugged construction make it an ideal solution for web servers, transaction processing systems, and database systems. It utilizes dynamic RAM technology, and employs ECC and "Memory On-Die Cooling" technologies to help increase speed and reliability.

The specific data is subject to PDF, and the above content is for reference

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