MTFC8GAKAJCN-1M WT

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MTFC8GAKAJCN-1M WT is a type of 3D NAND FLASH memory. It is one of the latest memory technology and is widely used for different applications. It behaves differently than traditional NAND FLASH as it utilizes multi-layer cell stack to provide higher density than a single layer stacked cell. This high density of the cell stack results to be highly reliable, robust and cost-effective memory option.

Application Field

MTFC8GAKAJCN-1M WT is mainly used for embedded applications, including security and automotive applications. It is also an ideal memory choice for solid state drives, enterprise, industrial and embedded applications. Considering the key features like a large capacity, better performance, high reliability and low cost, the MTFC8GAKAJCN-1M WT is being widely used in today’s technical world.

Working Principle

The MTFC8GAKAJCN-1M WT consist of twenty-four layers in 3D NANDFlash. It effectively utilizes vertical conformations to reduce the cell size, which leads to the higher logic cell density. The electrical connection between cells is done by the floating gate CMOx and chip package nickel fin. The MTFC8GAKAJCN-1M WT optimizes the reading speed of the memory device by utilizing the dual phase detectors and anti-interference technology. Due to the small cell size and high integration, the MTFC8GAKAJCN-1M WT can effectively provide high-speed low-power performance.

Advantages

The MTFC8GAKAJCN-1M WT offers several advantages compared to other memory technologies. It has the following advantages:

• High-density – MTFC8GAKAJCN-1M WT is capable of providing high-density cell stack which significantly reduces the size of the memory. This high-density allows the storage of large data in a highly cost-effective manner.
• High reliability - MTFC8GAKAJCN-1M WT utilizes dual phase detection which gives the device high-reliability. The low supply voltage of the cell results in better retention and temperature performance. It also minimizes the susceptibility at the interface with external devices.
• Low power consumption - The low supply voltage of the cells also helps to minimize power consumption. This is ideal for embedded applications as it allows for longer operation time for the device.
• Lower cost - MTFC8GAKAJCN-1M WT device is highly cost-effective. It is cheaper than other flash memory technologies like SRAM and DRAM.

In conclusion, the MTFC8GAKAJCN-1M WT is a revolutionary memory technology that offers improved performance, reliability and cost-effectiveness compared to traditional NAND Flash. It is ideal for embedded applications, as well as enterprise and industrial applications.

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