MTFC8GLWDQ-3M AIT Z

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The MTFC8GLWDQ-3M AIT Z is a type of multi-level cell NAND flash memory developed by Toshiba, which features a 3D charge trap flash architecture. It is a type of non-volatile memory that can store data even when the power is removed. The device is used in many applications such as digital cameras, mobile phones, and other portable electronic devices.

Working Principle

The MTFC8GLWDQ-3M AIT Z consists of three layers, including a silicon substrate, an insulating dielectric layer, and an active layer that contains memory cells. The memory cells are arranged in a 3D crosspoint array. Each memory cell has a control gate, which is used to control the current flow between the source and the drain. The data is stored in the memory cell using a charge trapping method and can be read or written using a sensing circuit.

The memory cell is a capacitor which stores charge when a voltage is applied. The amount of charge stored and the data written in the cell depend on the voltage and the size of the capacitor. During a read operation, the charge stored in the memory cell is measured and the data is retrieved from the memory cell.

Application Field

The MTFC8GLWDQ-3M AIT Z is used in a variety of applications. It is used as a main storage for digital cameras, advanced cell phone memory, digital audio players, and portable media players. It is also used as a secondary storage in laptop computers, tablets, and set top boxes. Additionally, it is used in enterprise servers and data centers as a non-volatile caching memory.

The MTFC8GLWDQ-3M AIT Z provides low power, high reliability, and fast write and read speeds. It also features a low bit error rate and offers a high endurance of up to 32,000 program/erase cycles. It is available in a variety of form factors, including multi-chip packages, small-outline packages, and bare chip packages.

Conclusion

The MTFC8GLWDQ-3M AIT Z is a type of NAND flash memory developed by Toshiba. It is a type of non-volatile memory that can store data even when the power is removed. The device is used in many applications such as digital cameras, mobile phones, laptops, and other portable electronic devices. The memory cell is a capacitor which stores charge when a voltage is applied and the data stored in the cell depends on the voltage and the size of the capacitor. The MTFC8GLWDQ-3M AIT Z provides low power, high reliability, and fast write and read speeds, and features a low bit error rate and offers a high endurance of up to 32,000 program/erase cycles.

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