| Allicdata Part #: | MURS120-M3/52T-ND |
| Manufacturer Part#: |
MURS120-M3/52T |
| Price: | $ 0.09 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Semiconductor Diodes Division |
| Short Description: | DIODE GEN PURP 200V 1A DO214AA |
| More Detail: | Diode Standard 200V 1A Surface Mount DO-214AA (SMB... |
| DataSheet: | MURS120-M3/52T Datasheet/PDF |
| Quantity: | 1000 |
| 9750 +: | $ 0.08297 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 875mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 2µA @ 200V |
| Capacitance @ Vr, F: | -- |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AA, SMB |
| Supplier Device Package: | DO-214AA (SMB) |
| Operating Temperature - Junction: | -65°C ~ 175°C |
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:MURS120-M3/52T is a single rectifier diode that provides efficient, cost-efficient performance and reliability. The diode is designed to rectify alternating current (AC) in power or signal circuits, which allows it to be used for a wide range of applications in both commercial and industrial settings.
A diode is a two-terminal electronic device consisting of antimony, arsenic, and bismuth in a PN-junction. When the forward voltage in the anode of the diode is greater than the reverse voltage on the cathode, that is the voltage difference between the anode and the cathode, the current flow in the device is rectified and is considered to be forward biased. As a result, the diode only allows current to flow in one direction, as determined by the applied voltage. The MURS120-M3/52T can handle forward currents up to 3A and a reverse voltage of up to 52V.
The MURS120-M3/52T is designed to provide energy efficiency, stability, and low resistance values, which makes it an ideal choice for general-purpose applications such as motor drives, power supply circuits, and rectifiers. The MURS120-M3/52T is also designed with an ultrafast switching capability, capable of quickly switching the direction of current flow, which is useful for controlling high-speed applications such as switching power supplies and microcontrollers. This allows the device to handle both high peak and rippling currents.
The MURS120-M3/52T is a robust device, capable of withstanding overvoltages up to 42V and a temperature range from -40°C to +150°C. The diode is constructed using a double-sided silicon substrate, with the antimony, arsenic, and bismuth creating a PN-junction between the two substrates. This PN-junction is the source of the rectifying current and voltage, and is where the reverse voltage is detected and the forward voltage is applied. This design allows the diode to rectify both AC and DC signals.
Due to its efficient, cost-efficient performance and reliability, the MURS120-M3/52T is ideal for applications ranging from low voltage rectification to high voltage power management. The device is particularly useful for high-frequency power and signal processing circuitry, Motor control, bridge rectifiers, and other high-current applications.
The MURS120-M3/52T is an efficient and reliable device that can be used for a wide range of applications due to its versatility and robust design. Its efficient performance and low resistance values make it suitable for both commercial and industrial settings, and it is designed to withstand overvoltages, high peak and rippling currents, and temperatures ranging from -40°C to +150°C. It is ideal for applications ranging from low voltage rectification to high voltage power management, making it a versatile and reliable solution for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MURS1J-TP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 1A 600V SM... |
| MURS340S-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| MURS105T3G | ON Semicondu... | 0.08 $ | 5000 | DIODE GEN PURP 50V 2A SMB... |
| MURS340S-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
| MURS140-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS320TR | SMC Diode So... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
| MURS240-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS120-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 200V 1A DO... |
| MURS240-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS120HE3/52T | Vishay Semic... | 0.19 $ | 1000 | DIODE GEN PURP 200V 2A DO... |
| MURS140HE3_A/I | Vishay Semic... | 0.12 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS360HE3/57T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| MURS140-E3/52T | Vishay Semic... | -- | 3000 | DIODE GEN PURP 400V 2A DO... |
| MURS320-E3/9AT | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 200V 3A DO... |
| MURS360SHE3_A/I | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 1.5A ... |
| MURS140HE3_A/H | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS360-E3/57T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
| MURS140-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 400V 1A SM... |
| MURS220T3G | ON Semicondu... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
| MURS210T3 | ON Semicondu... | 0.17 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
| MURS160-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 2A DO... |
| MURS260HE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2A DO... |
| MURS160-M3/5BT | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
| MURS120HE3_A/H | Vishay Semic... | -- | 1000 | DIODE GEN PURP 200V 2A DO... |
| MURS240T3G | ON Semicondu... | -- | 10000 | DIODE GEN PURP 400V 2A SM... |
| MURS205T3 | ON Semicondu... | 0.17 $ | 1000 | DIODE GEN PURP 50V 2A SMB... |
| MURS160HE3_A/H | Vishay Semic... | -- | 2250 | DIODE GEN PURP 600V 2A DO... |
| MURS160HE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 2A DO... |
| MURS240HE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS360S-M3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 3A DO... |
| MURS140HE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS360HE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| MURS240-E3/5BT | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 400V 2A DO... |
| MURS360HE3/9AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
| MURS140-13-F | Diodes Incor... | -- | 48000 | DIODE GEN PURP 400V 1A SM... |
| MURS160-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
| MURS360S-E3/5BT | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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MURS120-M3/52T Datasheet/PDF