| Allicdata Part #: | MV1N8172US-ND |
| Manufacturer Part#: |
MV1N8172US |
| Price: | $ 23.04 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | MV1N8172US Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 20.94640 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
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MV1N8172US is an important component in the field of transient voltage suppressors (TVS) - Diodes. It operates by providing protection to sensitive electronic components against electrical surges caused by transient voltage, and can improve the reliability of any electrical system. This article will explain the application field and working principle of the MV1N8172US.
Application Field and Working Principle of the MV1N8172US
The MV1N8172US is a diode-based solution specifically designed for monolithic high-speed transient voltage suppression (TVS) applications. This component is capable of suppressing high voltages built up in the transistors due to high switching speed and inductive load transients. It is usually used in systems that are exposed to severe voltage spikes, such as in industrial computer systems, aerospace, automotive, telecommunications, medical electronics, and consumer electronics.
The most important feature of the MV1N8172US is its protection capability. It is capable of handling high power surges (up to 76A) and high voltage transients (up to 8kV). It can also protect against the effects of Electrostatic Discharge (ESD) and Electrical Fast Transients (EFT). This makes it ideal for protecting sensitive electronic components from electrical surge damage.
The working principle of the MV1N8172US is based on the principle of avalanche breakdown. When exposed to transient voltages, it will conduct, causing it to avalanche and thus breaking down the excess voltage. This breakdown process occurs very quickly, thereby protecting the components from any further damage. The surge current protection is also provided by this device using Zener breakover protection.
The MV1N8172US also provides thermal protection against failure. It features a Power Dissipation Rating of up to 1.3W and a Thermal Resistance of up to 2.5°C/W, which provide a margin of safety for any over-temperatures. This ensures that the sensitive components remain safe from overheating due to high currents.
The voltage rating of the MV1N8172US also varies with the series of the device. Some series can handle a minimum breakdown voltage of 6.5V and an absolute maximum breakdown voltage of 8.5V, while some other series can support a minimum breakdown voltage of 12V and an absolute maximum breakdown voltage of 20V. The product also features an extended junction temperature range of -55°C to +175°C.
In conclusion, the MV1N8172US is a versatile diode-based solution designed to provide transient voltage suppression (TVS) applications with reliable protection. It is capable of handling high power surges and has extended temperature range and high-voltage breakdown ratings. It also provides thermal and Zener breakover protection, allowing it to protect sensitive components from electrical surge damage. It is thus an ideal component for applications that require reliable protection from transient voltage.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MV1N8161 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8148US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8156 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8173US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8172 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8169 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8157 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8174US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8153 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8171US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8164 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8180US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8154 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8167US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8155 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8173 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8177US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8166 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8176US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8170US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8151US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8162 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8171 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8155US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8151 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8152US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8179US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8180 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8154US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8162US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8178US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8150 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8165US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8175US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8179 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8157US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8172US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8147 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
| MV1N8158US | Microsemi Co... | 23.04 $ | 1000 | TVS DIODE |
| MV1N8175 | Microsemi Co... | 22.87 $ | 1000 | TVS DIODE |
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MV1N8172US Datasheet/PDF