Allicdata Part #: | MWI30-12E6K-ND |
Manufacturer Part#: |
MWI30-12E6K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT SIXPACK RBSOA 1200V E1 |
More Detail: | IGBT Module Three Phase Inverter 1200V 29A 130W C... |
DataSheet: | MWI30-12E6K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 1mA |
Base Part Number: | MWI |
Supplier Device Package: | E1 |
Package / Case: | E1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
NTC Thermistor: | Yes |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 1.18nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 20A |
Power - Max: | 130W |
Current - Collector (Ic) (Max): | 29A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Three Phase Inverter |
IGBT Type: | -- |
Part Status: | Obsolete |
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IGBT Modules are a type of advanced Transistor designed for high power and high efficiency applications. MWI30-12E6K is the specific type of IGBT Modules that offers high power and high voltage ratings to meet the requirements of various applications. It is a PiN diode-inversion type IGBT hybrid type module with a 1200 volts rating, a current rating of 30A and a low-on-state voltage of 2.1V.
This type of IGBT Module is mainly used in rectifiers and inverters, in welding processes and in AC or DC motor drive applications. The device is available in a TO-3P or TO-3PN package. It is equipped with an optimized structure and higher EMC ( Electromagnetic Compatibility) performance. It has a low switching loss and a low on-state voltage.
The working principle of MWI30-12E6K is quite simple. The device contains two switching elements, a thyristor and an insulated gate bipolar transistor (IGBT). The thyristor switches the current off and on based on the input voltage, and the IGBT amplifies the current when it is turned on and create constant-current output. The IGBT can be configured to be opened or closed by applying a gate voltage.The device is equipped with a fast recovery diode to protect it from short circuits.
In general, the MWI30-12E6K IGBT Module is high-performing and can provide highly efficient and high-power operation. It is suitable for rectifier circuits and high-frequency converters, and it is also capable of providing a high-power output. It is also highly reliable and has a long life cycle. The device is also quite easy to install and maintain, making it a great choice for a wide range of applications.
In summary, the MWI30-12E6K is a high-power, high performance IGBT Module that can provide efficient and reliable operation in a wide range of applications. It is equipped with a fast recovery diode and an optimized structure for optimal performance, and it is also quite easy to install and maintain. All these factors make it a great choice for applications where high power and/or efficiency is required.
The specific data is subject to PDF, and the above content is for reference
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