MWI300-12E9 Allicdata Electronics
Allicdata Part #:

MWI300-12E9-ND

Manufacturer Part#:

MWI300-12E9

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOD IGBT SIXPACK E+
More Detail: IGBT Module NPT Three Phase 1200V 530A 2100W Chass...
DataSheet: MWI300-12E9 datasheetMWI300-12E9 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Collector Cutoff (Max): 1mA
Base Part Number: MWI
Supplier Device Package: E+
Package / Case: E+
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 22nF @ 25V
Series: --
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 300A
Power - Max: 2100W
Current - Collector (Ic) (Max): 530A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase
IGBT Type: NPT
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - IGBTs - Modules

An IGBT module, or Insulated Gate Bipolar Transistor module, is a type of semiconductor component used for power or voltage regulation. Commonly seen in electrical and industrial systems, IGBT modules offer an efficient control of electric power. They are also widely used in modern converters, inverters, and numerous types of amplifiers. The module contains a dual-channel structure, silicon and germanium, in order to create a binary system for better control.

Among various IGBT modules available, the MWI 300-12E9 is an example of a typical component used for voltage control applications. This module has a 3-Phase 12 pulse and 12kV isolation, which makes it ideal for industrial power and automation systems. The main component of this unit is an insulated gate bipolar transistor (IGBT). An IGBT consists of a ‒-type layer and a +-type layer connected back-to-back, with a gate placed between the layers which is insulated from the body.

The MWI 300-12E9 can be used in a variety of applications, including the control of high voltage, high power, and high current power systems. One of the main advantages of this module is its ability to switch at a low voltage. This allows for a higher efficiency rating than other similar power control systems. The module has a low on-state voltage drop, meaning that it maintains a low power loss even when operating at a higher current load. This, in turn, helps reduce electrical costs.

The working principle of the module is quite simple. When the gate is under a positive voltage, a current can flow through the transistor. This current can be controlled according to the intensity of the applied voltage. The module overall is designed to be highly efficient and is capable of handling high voltage and high power, and when used properly it is able to provide over 25 Amps at 48V of output power. It is also designed to be capable of operating efficiently at a wide range of frequencies, enabling it to be used in a variety of industrial or power control applications.

Overall, the MWI300-12E9 IGBT module is an efficient, reliable tool for controlling electric power and is suitable for a variety of applications. This unit is designed to provide reliable performance, energy efficiency and low voltage drop steady voltage output, making it a perfect choice for many industrial power and automation applications. With its low maintenance and fast switching capabilities, it is a great choice for those looking to control their electricity costs and ensure efficient electric power regulation.

The specific data is subject to PDF, and the above content is for reference

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