
Allicdata Part #: | MWI50-12A7-ND |
Manufacturer Part#: |
MWI50-12A7 |
Price: | $ 65.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT SIXPACK RBSOA 1200V E2 |
More Detail: | IGBT Module NPT Three Phase Inverter 1200V 85A 350... |
DataSheet: | ![]() |
Quantity: | 1000 |
6 +: | $ 59.38170 |
Current - Collector Cutoff (Max): | 4mA |
Base Part Number: | MWI |
Supplier Device Package: | E2 |
Package / Case: | E2 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
NTC Thermistor: | No |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 3.3nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.7V @ 15V, 50A |
Power - Max: | 350W |
Current - Collector (Ic) (Max): | 85A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Three Phase Inverter |
IGBT Type: | NPT |
Part Status: | Active |
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The MWI50-12A7 module is a vital part of the transistor family, one of many different IGBTs, a type of insulated gate bipolar transistor. It is mainly used in power systems and electric machines, where semiconductor elements are necessary for regulating the amount of current being taken in and released. This device is perfect for such applications, as it has an incredibly low on-state voltage drop, making it highly efficient at creating energy. While its isolation voltage is not as high as some other options, its low price and easy use is what separates it from the competition.
The MWI50-12A7 module has a variety of uses. It is commonly employed in motor control solutions, due to its ability to quickly switch between higher voltages and higher currents. Another practical application is flyback topology power supplies, wherein the device can be used to switch currents with precision and peak efficiency. As an IGBT, the MWI50-12A7 also is well suited for use in low-voltage, low-power applications, as these often require precise switches in order to function properly.
In order to understand how the MWI50-12A7 module functions, it is important to be familiar with the basics of IGBT semiconductor elements. These elements consist of two layers of material; one layer is the gate insulator, which is made of an oxide semiconductor, and the other layer consists of two different conductive materials that form the collector and emitter parts. When a current enters the two different conductive materials, the ions inside the insulator move and create a depletion field between the two different materials. This depletion field changes its intensity as the current flows through the two layers, which is what allows the module to act as a switch, allowing or disallowing currents to pass through the device.
The great thing about the MWI50-12A7 device is that its switching speed and response time are absolutely incredible. The transfer time for the device, from off to on (or vice-versa) is within 5 to 6 nanoseconds, making it one of the fastest IGBTs on the market. The great thing about using faster switching speeds is that the overall efficiency of the module increases, with faster responses allowing for less power wastage, faster transmission times and smoother operation.
Additionally, the MWI50-12A7 module is a safe and reliable choice. The device has been tested and found to handle voltages up to 1200V, while its insulation voltage rating can handle over 6000V. This robustness and high voltage capability makes it an ideal choice for any application that needs to switch between larger voltages and currents.
In conclusion, the MWI50-12A7 module is a great and versatile option when it comes to IGBTs. This transistor module is highly efficient, incredibly fast and reliable, making it perfect for motor control and large-scale power applications. Additionally, its low price makes it the optimal choice for anyone looking for a powerful yet economical IGBT module for their project.
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