Allicdata Part #: | MWI50-12E6K-ND |
Manufacturer Part#: |
MWI50-12E6K |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOD IGBT SIXPACK RBSOA 1200V E1 |
More Detail: | IGBT Module Three Phase Inverter 1200V 51A 210W C... |
DataSheet: | MWI50-12E6K Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Current - Collector Cutoff (Max): | 300µA |
Base Part Number: | MWI |
Supplier Device Package: | E1 |
Package / Case: | E1 |
Mounting Type: | Chassis Mount |
Operating Temperature: | -40°C ~ 125°C (TJ) |
NTC Thermistor: | Yes |
Input: | Standard |
Input Capacitance (Cies) @ Vce: | 2nF @ 25V |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.9V @ 15V, 35A |
Power - Max: | 210W |
Current - Collector (Ic) (Max): | 51A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Configuration: | Three Phase Inverter |
IGBT Type: | -- |
Part Status: | Obsolete |
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The MWI50-12E6K is an insulated-gate bipolar transistor (IGBT) module manufactured by Crawford Germany. It is intended for applications in portable generators and other equipment that require high-frequency power conversion.
The IGBT module is available in a package size of 50 mm and is rated for an operating voltage of 12 V and a continuous current of 5 A. It is designed to operate at up to 6 kHz switching frequency and has a break-over voltage capability of 5.6 V. Its peak power capability is 63.9 W.
The module is designed using a three-terminal insulated-gate bipolar transistor (IGBT) and a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) connected in parallel. The module is designed to provide power conversion with accurate control of the current and voltage without producing too much heat. The module can be connected to the other equipment through three independent terminals - the power terminal, the ground terminal and the control terminal. The module is driven with a fixed frequency square wave which is used to control the power supply and the power output from the module.
The module operates in three stages. First, the IGBT is switched on, transferring power through the Jumper circuit to the power terminals of the module. The MOSFET is then turned off to prevent overloading the module. Finally, the IGBT is turned off, reducing the power flow and preventing any current or voltage surges.
In addition to its power-overcurrent capability, the MWI50-12E6K also features integrated snubber or switching diodes that reduce the current inrush at start-up, making it suitable for equipment with high inrush currents. The module also features thermal monitoring for extra protection to prevent thermal runaway.
The MWI50-12E6K is a reliable, energy-efficient IGBT module that can be used for a variety of applications. Its power-overcurrent protection and thermal monitoring capabilities make it suitable for equipment with higher current or voltage spikes, such as portable generators and uninterruptible power supply (UPS) systems. The module is also designed to minimize power consumption, making it a great choice for applications such as inverters and other power conversion devices.
The specific data is subject to PDF, and the above content is for reference
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