Allicdata Part #: | 1092-1111-ND |
Manufacturer Part#: |
MX25L1006EMI-10G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Macronix |
Short Description: | IC FLASH 1M SPI 104MHZ 8SOP |
More Detail: | FLASH - NOR Memory IC 1Mb (128K x 8) SPI 104MHz 8... |
DataSheet: | MX25L1006EMI-10G Datasheet/PDF |
Quantity: | 43192 |
Series: | MX25xxx05/06 |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Mb (128K x 8) |
Clock Frequency: | 104MHz |
Write Cycle Time - Word, Page: | 50µs, 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The MX25L1006EMI-10G is a type of non-volatile memory that is widely used in a variety of application fields, from automotive and general purpose embedded systems to consumer electronics and computer applications. It offers a comprehensive feature set that allows for a variety of applications and is suitable for use for a range of high-density, high-performance, low-power requirements.
MX25L1006EMI-10G is made up of a single transistor-floating gate memory cell, which makes it incredibly efficient at storing larger amounts of data than is possible with other non-volatile memory devices. The memory cell is also extremely stable, making it ideal for use in both high-speed and long-term applications. The device operates on a supply voltage of 1.65 – 2.00V and has a data retention time of 100 years.
The MX25L1006EMI-10G works through the use of electrical charge that is written to and read from the memory cell. The data is programmed and erased by applying a voltage to the gate of the device, which serves as a control electrode. When a voltage is applied to the gate, the current flowing through the transistor can be controlled. When the voltage applied is of the correct magnitude and time duration, the charge state of the memory cell can be changed from its original state, to either programmed or erased depending on the requirements of the application.
MX25L1006EMI-10G can store up to 256 Mbits of data and features a wide selection of operating temperatures, making it ideal for a variety of application fields. It is also highly reliable, offering more than 1 million erase cycles and up to 100 years of data retention, making it ideal for a wide range of mission-critical applications. It also has a low power consumption, making it ideal for battery-powered applications.
In terms of its application fields, the MX25L1006EMI-10G is widely used in automotive and general purpose embedded systems. It is generally used in memory modules, solid-state drives, and in digital cameras. As mentioned above, it is suitable for high-performance, long-term, and high-density storage applications, making it ideal for use in a wide range of industries. It is used in automotive, mobile phone, industrial, medical, and consumer electronics.
In summary, the MX25L1006EMI-10G is a highly reliable, robust, efficient, and energy-efficient non-volatile memory device suitable for a wide range of applications. It is widely used in automotive and general purpose embedded systems, as well as in digital cameras and other modern devices. It offers a range of features that allow for reliable storage with long-term data retention and low power consumption, making it ideal for battery-powered applications. In addition, its wide operating temperature makes it suitable for a variety of applications, across a range of industries. All in all, the MX25L1006EMI-10G is an excellent choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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