MX25L25735FZ2I-10G Allicdata Electronics
Allicdata Part #:

1092-1152-ND

Manufacturer Part#:

MX25L25735FZ2I-10G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Macronix
Short Description: IC FLASH 256M SPI 104MHZ 8WSON
More Detail: FLASH - NOR Memory IC 256Mb (32M x 8) SPI 104MHz ...
DataSheet: MX25L25735FZ2I-10G datasheetMX25L25735FZ2I-10G Datasheet/PDF
Quantity: 5682
Stock 5682Can Ship Immediately
Specifications
Series: MX25xxx35/36 - MXSMIO™
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 30µs, 1.5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)
Description

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MX25L25735FZ2I-10G Application Field and Working Principle

MX25L25735FZ2I-10G belongs to a class of non-volatile flash memory semiconductor devices, which are classified as memory. Non-volatile memory refers to memory that can retain information without additional power supply. Compared with other types of memory, non-volatile memory is more expensive, but it has the advantages of low power consumption, large data capacity, fast access speed and other characteristics.

Application Field

With its properties and features, MX25L25735FZ2I-10G is used in various fields. It is usually used in embedded microcontroller systems, especially in applications where the extra cost can be made up for by its energy efficiency, such as automotive and medical electronics. Other applications include portable electronics, internet of things applications, industrial control, identification cards and other advanced electronics applications.

Working Principle

Unlike traditional RAM (Random Access Memory), MX25L25735FZ2I-10G operates without a battery. It stores information in a Flash Cell, which is made up of four transistors and a capacitor. The Flash Cells are arranged in an array, and data is stored in a manner similar to DRAM, with cells being charged or discharged to represent 0\'s and 1\'s.

A voltage of approximately 5V is applied across the Flash Cell during read or write operations. When reading data, the voltage is applied and the cell\'s state is checked by looking for current flowing between the capacitor and the source. For write operations, the charge levels of the cells are changed according to the data to be written.

MX25L25735FZ2I-10G also incorporates a number of advanced error corrections and technologies such as Global Redundancy Arrays (GRA), high speed programming, built-in Data Encryption Standard algorithms, and Autonomous Refresh, etc., which allow it to perform well in extreme physical or environmental conditions.

Conclusion

MX25L25735FZ2I-10G is a non-volatile Flash memory device with a wide range of applications. It is suitable for embedded microcontroller systems, portable electronics, industrial control systems, identification cards, and more. Furthermore, features such as Global Redundancy Arrays and Autonomous Refresh allow it to perform under extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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