Allicdata Part #: | 1092-1122-ND |
Manufacturer Part#: |
MX25L1606EM1I-12G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Macronix |
Short Description: | IC FLASH 16M SPI 86MHZ 8SOP |
More Detail: | FLASH - NOR Memory IC 16Mb (2M x 8) SPI 86MHz 8-S... |
DataSheet: | MX25L1606EM1I-12G Datasheet/PDF |
Quantity: | 41208 |
Series: | MX25xxx05/06 |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 16Mb (2M x 8) |
Clock Frequency: | 86MHz |
Write Cycle Time - Word, Page: | 50µs, 3ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOP |
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The MX25L1606EM1I-12G memory device belongs to a category known as non-volatile memories. Non-volatile memories are also referred to as solid state memories and they store information even when electrical power is removed. This makes them quite useful in a wide range of data storage and retrieval applications.
In the field of embedded systems, the MX25L1606EM1I-12G is used in applications such as consumer electronics, automotive systems, industrial control systems, and medical devices. In these applications, the non-volatile memory offers effective data storage with fast data retrieval times and reliable data retention.
The working principle of the MX25L1606EM1I-12G is based on a floating gate technology that is well-known and proven over time. In this technology, a tiny amount of voltage is applied across the floating gates of a memory cell. This voltage modifies the threshold voltage of the memory cell, causing the cell to hold a logic value.
The memory cell can store one of two values, a “0” or a “1”. By changing the voltage across the floating gate, the memory can be programmed to a certain value, which can be read out at a later time. This allows the memory device to permanently store data, even when electrical power is removed.
The memory device is also often referred to as an EEPROM, which is an acronym for Electrically Erasable Programmable Read-Only Memory. As the name implies, it is both programmable and erasable. This makes the memory device a useful tool for both permanent data storage and for temporary data retrieval schemes.
The MX25L1606EM1I-12G is a high-density memory device that is capable of storing up to 16 Mbits of data. This makes the device suitable for a wide variety of applications including automotive, industrial, and consumer electronics. The memory device is offered in the standard SOIC-8 package, allowing it to be used in a variety of embedded systems.
In summary, the MX25L1606EM1I-12G is a high-density non-volatile memory device that is based on a proven floating gate technology. The device is used in a wide range of applications and offers reliable data storage, fast data retrieval, and low power consumption. It is offered in a standard SOIC-8 package and is suitable for applications such as automotive, industrial, and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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