MX25V4006EM1I-13G

Series:	MX25xxx05/06
Packaging:	Tube
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	4Mb (512K x 8)
Clock Frequency:	75MHz
Write Cycle Time - Word, Page:	50µs, 1ms
Memory Interface:	SPI
Voltage - Supply:	2.35 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOP

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

？Introduction
MX25V4006EM1I-13G is a low power, high density static random access memory (SRAM). It is a type of non-volatile memory that retains its contents even when power is lost. With 1,176 Kbit capacity this component from Macronix is an excellent choice for a variety of applications, such as automotive and embedded designs, industrial systems, memory expansion for FPGAs or ASICs, or for embedded control systems. It also has a low-profile 20-pin SMD package, which makes it easy to install on a PCB.

Application Field
MX25V4006EM1I-13G is commonly used in a wide range of applications. It can be used to store and retrieve data in automotive systems, such as engine control, fuel injection and ignition control systems, as well as in embedded communication, and industrial control systems.
The component is also used in data access applications such as mobile and embedded computing, embedded control systems, and STB control systems. Its high reliability and low power consumption make it a preferred choice in these applications. Its 1,176 Kbit capacity is also beneficial in applications where there a need for a large amount of data storage. Its wide operating temperature range of (-40° to +85°C) also makes it suitable for operation in harsh environments.

Working Principle
MX25V4006EM1I-13G is a static random access memory device. It is made up of multiple memory blocks, each with its own row and column address decode circuitry. This static RAM works by transferring the contents of the memory cells from one memory location to another. The data is transferred either directly between memory locations or through the memory blocks. This type of memory is typically used in systems where speed is essential and data needs to be read and written quickly.
The device is capable of withstanding voltage fluctuations between 2.5 to 3.6V. It also offers an extended temperature range, 4.5mA active current, and 0.5mA twin-wire serial interface. The device also has a read/write cycle time of 25ns, which makes it suitable for use even in high-speed applications. With its low power consumption, wide temperature range and fast speed, MX25V4006EM1I-13G is an excellent choice for many applications.

Conclusion
MX25V4006EM1I-13G is an excellent choice for applications requiring high data storage capacity and low power consumption. Its wide temperature range, low active current, and fast access time make it suitable for operation in harsh environments and in applications where speed and accuracy are essential. With these features, this component from Macronix is a great choice for automotive and embedded systems, memory expansion for FPGAs or ASICs, and embedded control systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description