MX29GL128FHT2I-70G

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Memory is the component of a computer system that stores data and programs for access by the processor. It allows for efficient access and manipulation of information that makes computer systems so powerful. The MX29GL128FHT2I-70G memory is a high-performance, low-power solution for a wide range of applications that require a high degree of integration and flexibility.

The MX29GL128FHT2I-70G is a 128Mb(megabit) memory chip designed for high-performance, low-power applications. It is based on Macronix\'s floating-gate trench memory (FGM) technology, which offers higher capacity and advanced chip size optimization to meet the needs of system-level integration. The MX29GL128FHT2I-70G is also designed with a low power-consumption of 200mW, making it suitable for use in a range of portable and mobile applications where power efficiency is critical.

The MX29GL128FHT2I-70G is ideal for applications such as embedded systems, mobile phones, digital cameras, industrial equipment and other mobile and portable devices. In these types of applications, its low power consumption enables longer usage time and improved portability. Additionally, the MX29GL128FHT2I-70G features fast access times, with a read rate of 50ns and a random access time of 10ns, and has an operating temperature range of -40°C to +85°C, enabling it to be used in a variety of harsh environment.

The embedded FGM technology used in the MX29GL128FHT2I-70G is an advanced memory architecture that consists of floating-gate trenches and an array of flash cells. Floating-gate trenches are shallow trenches in the substrate, with lines of thin Silicon Nitride (SiN) over them to form thin and long flash cells. The cells can store an electrical charge with an ultra-low leakage rate, ensuring reliable data retention even after long periods of inactivity. The FGM technology provides high-capacity, high-density and low-power memory solutions with minimal increase in silicon area.

The MX29GL128FHT2I-70G also features a high write speed and endurance, with up to 10,000 erase/write cycles and up to 1,000K write/erase operations. It supports up to four SDRAM devices, including the GDDR2 and GDDR3 memory standards, and can be programmed for both x16 and x32 data paths. Additionally, the MX29GL128FHT2I-70G includes an enhanced error correction code (ECC) feature, which increases reliability and durability, as well as a self-refresh mode for improved power savings. The memory also features an advanced 38-bit read/write algorithm that increases speed and reduces errors.

In summary, the MX29GL128FHT2I-70G is an advanced, low-power and high-performance memory solution designed for embedded, portable and mobile applications. Its combination of high capacity and FGM technology enables efficient integration, while its fast access times and wide operating temperature range make it suitable for a wide range of applications. Additionally, its low power consumption and advanced error correction code feature ensure reliability and improved power savings.

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