MX29LV400CTTI-70G

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Memory

MX29LV400CTTI-70G is an electrically-erasable programmable read-only memory (EEPROM) device which offers designers a high-integrity non-volatile memory. This device is manufactured using Advanced Mirrored Bit Split NMOS (AMBS) technology independently developed by Macronix.

The MX29LV400CTTI-70G features a 4 Mbit (512 K x 8-bit) organization and is organized by closely coupled bit lines and source lines. The MX29LV400CTTI-70G has four new features. The first one is the status bit which provides the device the ability to detect block-erase cycle inhibiting accidental erasure of the whole array. The second one is the sector protection which blocks the erase and program operations of target sector. The third one is the detect miniProgram function which can identify program abnormality, such as address over-speed. The fourth one is the Lockdown method which uses the VDDQ as the key for programming and erasing the chip. These features enable the MX29LV400CTTI-70G to achieve high reliability and security.

Application Field

The MX29LV400CTTI-70G\'s main feature is its superior reliability and provider the end user with greater design flexibility. The device is suitable for many fields including consumer electronics, digital communications, automotive, and industrial control.

The MX29LV400CTTI-70G is well suited for use in consumer electronics applications such as digital cameras and PDAs due to its superior reliability and design flexibility. The device also finds a niche in digital communications, particularly data transfers and processing within routers. The device is also ideal for use in automotive applications such as cruise control, body-computer, and data logging because of its heat tolerance. Finally, the MX29LV400CTTI-70G is used in industrial control applications such as factory automation and robotics due to its fast programming and erase times.

Working Principle

The MX29LV400CTTI-70G uses Fowler-Nordheim tunneling to achieve the programming and erasing operations. During the programming process, a relatively high voltage (typically 11 V) is applied to the bit lines in order to inject electrons into the semiconductor lattice and change the bit cells from 0 to 1. The erasing process requires that a relatively high voltage (typically 21 V) is applied to the entire chip in order to remove electrons from the bit cells, changing them from 1 to 0.

The MX29LV400CTTI-70G utilizes the very reliable and reliable status bit to ensure that the erasing and programming operations are completed successfully. The status bit is set to 0 when the chip is in its unerased state and is set to 1 when the programming and erasing operations are successfully completed. The status bit also acts as a protection mechanism against accidental erasing of the entire array, since the device won\'t erase if the status bit is set to 1.

Finally, the Lockdown feature greatly enhances the security of the MX29LV400CTTI-70G. When enabled, this feature prevents further programming and erasing operations by using the VDDQ pin as the key for programming and erasing operations.

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