MX29GL256FHT2I-90Q

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The MX29GL256FHT2I-90Q is classified as a Memory. This type of device is specialized for storing data, specifically to serve as long-term memory or main memory in electronic circuitry. It is primarily used in computers, where multiple uses and speedy data processing is necessary. The types of memories vary in size, speed, architecture, power management and reliability. The MX29GL256FHT2I-90Q makes use of the latest in technologically advanced memory components and offers the reliable, high-speed data storage required for today’s demanding applications.

The MX29GL256FHT2I-90Q is a high-speed, low-power Synchronous DRAM device, designed and manufactured by Samsung. It has a storage of 256Mb and a random read speed of 160Mb/s and a random write speed of 70Mb/s. This memory is primarily used in computers and has a power consumption of 1.5mW/Mb and a chip enable input. It is comprised of 184,736KWRAM cells, organized as 256Mbits, for a total of 256Mb. The device is also built with a PLL circuit, Refresh Counter and Self Refresh Mode functionality.

The main application fields of the MX29GL256FHT2I-90Q memory are in video coprocessors, network processors, and cellular phones. Its compact form factor and low power consumption make it well-suited for these types of applications. It can also be used in multimedia applications, like digital cameras, desktop and laptop computers, and other consumer electronics. The MX29GL256FHT2I-90Q memory is also used to store information in power vulnerable environments, where power management is required.

The working principle of the MX29GL256FHT2I-90Q is based on the Memory-Cell concept. A Memory-Cell is a combination of a Storage Element, which is able to store one bit, and a Read/Write circuit. The Memory-Cell is responsible for retrieving and storing information in the device. The Read/Write circuit is composed of several transistors, which are used to read or write data from or to its Storage Element. The Memory-Cell works by emitting an electrical charge, which is captured by the transistors when writing data. When reading, the Memory-Cell receives this electrical charge and its content is retrieved.

The MX29GL256FHT2I-90Q makes use of Synchronous DRAM technology to access memory blocks quickly. Synchronous DRAM is different from Asynchronous DRAM in that it uses a clock to synchronize memory access. This allows for faster data access, lower latency and lower power consumption. The MX29GL256FHT2I-90Q also uses a PLL circuit, Refresh Counter and Self Refresh Mode, which are designed to improve performance, reduce power consumption, and extend the life of the device.

In conclusion, the MX29GL256FHT2I-90Q is a high-speed, low-power Memory-Cell that is used in multiple applications such as in multimedia and consumer electronics. Its Synchronous DRAM technology and advanced power management capabilities make it well-suited for these applications. It is also reliable and offers high-speed data storage for today’s demanding applications. In summary, the MX29GL256FHT2I-90Q is a highly efficient and reliable device, which is great for applications that require data storage and quick access.

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