MX29LV400CTTI-55Q

Series:	MX29LV
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	4Mb (512K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP

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MX29LV400CTTI-55Q Application Field and Working Principle

MX29LV400CTTI-55Q belongs to the category of Memory. It\'s a 4-megabit FLASH memory, which consists of five Top Boot sectors and eleven Bottom Boot sectors. It is specially designed for applications in automotive infotainment systems and industrial robotic systems. It has a lower power consumption and higher speeds, so it is well suited for these use cases.

MX29LV400CTTI-55Q uses advanced CMOS technology combined with Static RAM memory architecture to enable a high-performance, high-capacity FLASH memory device. It provides fast read and write access times, which make it suitable for use in a variety of embedded systems. It has an advancedsecurity feature, which ensures secure data transfers and secure execution.

Memory Characteristics:

It uses a standard 400-mil package with 8 pins, which makes it easier to integrate it into a system or circuit. It has a die size of 298 mils, making it highly suitable for use in a variety of small electronic systems. It has a program/erase endurance of 10,000 cycles, and a data retention period of 20 years.

Additionally, the MX29LV400CTTI-55Q has a Wide Voltage operation range of 2.7 to 3.6 V. It operates with a high speed of 55 MHz and low power

consumption. It has a typical access time of 45 ns, which makes it suitable for use in high-speed, mobile applications. It is also suitable for parallel bus operations using multiple devices.

Working Principle:

The MX29LV400CTTI-55Q FLASH memory allows for fast Secured Program cycles as well as comprehensive memory protection features. It uses a standard YACE (yield accelerated chip engineering) process for reliable performance even under high temperature operating conditions. It provides an efficient way of program/erase operations, allowing for fast rewriting of data.

The FLASH memory also supports array protection, which prevents accidental erasure or overwriting of data in the array. It also provides an efficient write-protection flag to protect sectors from being rewritten or erased. It supports bad block management, which facilitates management of data in bad blocks.

In a nutshell, the MX29LV400CTTI-55Q FLASH memory is a suitable choice for applications in automotive infotainment systems and industrial robotic systems. It is designed to provide fast read and write access times and superior reliability. It also has superior memory protection features, making it an ideal choice for secure data transfers and secure execution.

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