MX30LF1G08AA-XKI

Series:	MX30LF
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NAND
Memory Size:	1Gb (128M x 8)
Write Cycle Time - Word, Page:	30ns
Access Time:	30ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	63-VFBGA
Supplier Device Package:	63-VFBGA (9x11)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MX30LF1G08AA-XKI Application Field And Working Principle
MX30LF1G08AA-XKI is a type of memory and is also referred to as a Flash Memory Card or NAND Flash. Flash Memory is nonvolatile semiconductor memory that can be electrically erased and rewritten. It is a type of memory that stores data even when it is powered off, making it an ideal solution for data storage. The MX30LF1G08AA-XKI is a more of a specific type of flash memory which is composed of 1 gigabit of NAND flash memory cells and is most commonly used for embedded systems and industrial applications. Application Field
MX30LF1G08AA-XKI is used for a variety of different applications, including datalogging, industrial automation, automotive, consumer electronics, medical devices, robotics, and imaging. In the medical field, it is used for archiving imaging data, clinical data, electronic medical records, and other critical healthcare information. In the automotive sector, it is used to store audio and video, safety system files, and any other information the vehicle may need to access. In the consumer electronics industry, it is used for digital cameras, MP3 players, and USB storage devices.Working Principle
The working principle of MX30LF1G08AA-XKI is based on the concept of charge storage and tunneling breakdown. The process starts by storing electrons in tiny memory cells made of layers of silicon called Floating-gate Transistors, or FGP. These FGP\'s allow electrons to be stored in the channels between the gates. The electrons are then transferred between the tunneling oxide barrier and the FGP\'s via a process called tunneling breakdown.When the memory cell is charged, a voltage is applied to the terminal, the cells which are already filled with electrons are then read. When the memory cell needs to be written, the exact opposite process applies; the voltage applied to the cells forces electrons to be removed from the FGP\'s and tunnel oxide barriers; thus allowing for new electrons to be stored.Since the electrons are stored for a long time as there is no current running through the cells, the memory cells are non-volatile. This is an important factor when using these types of memory cards, as they are able to maintain their stored data even when the power supply is removed.In conclusion, the MX30LF1G08AA-XKI Flash Memory is an ideal solution for many different applications, from medical and automotive to consumer electronics. Thanks to its non-volatile nature, it is able to maintain its stored data even when the power supply is removed. Its working principle is based on the concept of charge storage and tunneling breakdown and is used for storing data for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description