MX5KP110AE3 Allicdata Electronics
Allicdata Part #:

1086-9440-ND

Manufacturer Part#:

MX5KP110AE3

Price: $ 24.72
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V CASE 5A
More Detail: N/A
DataSheet: MX5KP110AE3 datasheetMX5KP110AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 22.47060
Stock 1000Can Ship Immediately
$ 24.72
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: Case 5A (DO-204AR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 28A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS (transient voltage suppressor) diodes are components that protect vulnerable circuits and components that may be subjected to damaging electric over-voltages. In essence, these diodes are avalanche diodes that can stand up to transient voltage spikes. The MX5KP110AE3 is one such TVS diode designed for low-losses, high-current, and medium power applications.

The MX5KP110AE3 is a unidirectional thyristor designed specifically for situations requiring maximum clamping voltage and energy dissipation. It features a low breakover voltage of 10 V, and the maximum surge power dissipation rating is 300 watts with a maximum peak pulse current of 42 A. Its clamp voltage is 103 V, and its peak pulse current with a 10/1000 waveform is 70 A. Furthermore, this device can withstand an operating junction temperature of -55 to +150℃, making it suitable for a variety of extreme environments.

The MX5KP110AE3 has numerous potential fields of application, such as in situations where low-losses, high-current, and medium-power are all required at once. These can include applications such as servers, industrial equipment, lighting, recreational equipment, and automobiles.

Its working principle is simple: when the system experiences a voltage spike, and the voltage goes above the device\'s clamping voltage, the built-in junction PNPN structure comes into play and conducts current around the reverse biased P-N junction. This then steamrolls the incoming current and suppresses the voltage spike. Essentially, it sacrifices its own junction to keep the trigger voltage from going above that of the connected components.

Unidirectionality is another important feature of the MX5KP110AE3. It provides protection for commonly used positive device transistors while blocking negative voltage transients. This is done by allowing the P-N junction to conduct current and suppressing the incoming voltage spike only when the voltage increases above the diode’s breakover voltage.

Aside from unidirectionality, the MX5KP110AE3 includes several other protective features. The device has an impressive clamping ratio, meaning that the device can withstand higher voltages than those at which it is supposed to protect. The device also has a low reverse leakage current, which prevents the current flow across the device when protecting, but keeps the normal current flow through it when not protecting.

In summary, the MX5KP110AE3 is a unidirectional thyristor designed specifically for situations requiring maximum clamping voltage and energy dissipation. It has a variety of potential applications, such as servers, industrial equipment, vehicles, and recreational equipment. Furthermore, this device’s working principle is simple and includes protective features such as unidirectionality, high clamping ratio, and low reverse leakage current.

The specific data is subject to PDF, and the above content is for reference

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