MX5KP28AE3 Allicdata Electronics
Allicdata Part #:

1086-9492-ND

Manufacturer Part#:

MX5KP28AE3

Price: $ 24.72
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 28V 45.5V CASE 5A
More Detail: N/A
DataSheet: MX5KP28AE3 datasheetMX5KP28AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 22.47060
Stock 1000Can Ship Immediately
$ 24.72
Specifications
Voltage - Clamping (Max) @ Ipp: 45.5V
Supplier Device Package: Case 5A (DO-204AR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Current - Peak Pulse (10/1000µs): 110A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 31.1V
Voltage - Reverse Standoff (Typ): 28V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are a type of semiconductor device which are used to protect sensitive components from damage due to high voltage surges. The MX5KP28AE3 is one such TVS - Diode specifically designed for applications where extremely high levels of transient fault protection is required.

Application Field

The MX5KP28AE3 is a 5KW diode designed to protect sensitive equipment, such as computers, phones, and other electronics, from high-voltage spikes and transients. It has a peak pulse current of 28A and a peak pulse power rating of 5KW, making it well suited for protecting against high power surges. The device has an ultra-low operational temperature coefficient which allows it to operate in extreme temperatures without significantly affecting the protection characteristics. It also has an ultra-low clamping voltage which ensures minimal voltage overshoot during transient events, thus providing maximum protection to the application.

In addition to protecting against high voltage spikes, the MX5KP28AE3 is also designed to reduce interference from EMI/RFI noise in the system. The diode is tolerant to frequencies from DC to 400MHz, and it has an extremely low clamping voltage in this frequency range. This makes it an excellent choice for applications where noise immunity is a concern.

Working Principle

The working principle of this diode is based on the principle of avalanche breakdown. When a high voltage transient is applied to the device, the voltage increases to a level above the device\'s breakdown voltage. At this point, electrons from the junction break down, rapidly creating a number of electron-hole pairs. The created electron-hole pairs allow for a current to flow through the diode, thus dissipating energy in the form of heat. The diode then clamps the voltage to a level below the breakdown voltage, thus protecting the sensitive components.

The MX5KP28AE3 is designed to be very robust and can withstand multiple transient events. It is also designed with a high power rating and can dissipate large amounts of energy without damage. This ensures that the device can withstand high voltage and power surges.

The MX5KP28AE3 is an ideal choice for applications that require high levels of transient fault protection. It offers excellent performance in terms of suppression of high voltage transients, noise immunity, and robustness. It also offers a very low clamping voltage and is capable of dissipating large amounts of energy. This ensures that the sensitive components in the application are well protected.

The specific data is subject to PDF, and the above content is for reference

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