MXLPLAD18KP45CAE3 Allicdata Electronics
Allicdata Part #:

MXLPLAD18KP45CAE3-ND

Manufacturer Part#:

MXLPLAD18KP45CAE3

Price: $ 36.64
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 45V 72.7V PLAD
More Detail: N/A
DataSheet: MXLPLAD18KP45CAE3 datasheetMXLPLAD18KP45CAE3 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
100 +: $ 33.30670
Stock 1000Can Ship Immediately
$ 36.64
Specifications
Current - Peak Pulse (10/1000µs): 248A
Supplier Device Package: PLAD
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 18000W (18kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 72.7V
Voltage - Breakdown (Min): 50V
Voltage - Reverse Standoff (Typ): 45V
Bidirectional Channels: 1
Type: Zener
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes

MXLPLAD18KP45CAE3 TVS diodes have been gaining traction in an ever increasing number of modern electronic circuits. As the need for higher speed signal transmission in ever increasingly complex systems grows, so does the need for the signal to travel faster and farther without sacrificing quality or reliability. TVS diodes are transverse voltage suppressor (TVS) diodes specifically designed to provide protection against transient overvoltage. TVS diodes are electronic components used to protect circuits from high voltage, high current, and high energy transients. These components act as a voltage independent "clamp" that limits the voltage that can be applied to a protected circuit. Unlike transient voltage suppressor (TVS) diodes which are designed to absorb energy and dissipate it as heat, TVS diodes are designed to absorb electrical energy and "clamp" the voltage at a predetermined level before releasing the clamped energy to the protected circuit.The MXLPLAD18KP45CAE3 is an automotive qualified TVS diode that is designed to protect against electrostatic discharge (ESD) and electrical fast transients (EFT). It is designed to provide a series connection in automotive applications, providing protection for up to 18V of operating voltage. The diode also has a low breakdown voltage of 14V with a low clamping voltage of 22.5V. It is packaged in an industry standard SOT23-3L package and is characterized for additional ESD protection as per AEC-Q100.The MXLPLAD18KP45CAE3 is suitable for use in applications such as automotive infotainment systems, body electronics, and automotive networking. It can also be used in applications such as smart meters, office equipment, and power supplies.The working principle of the MXLPLAD18KP45CAE3 is based on the tunneling and breakdown mechanism of the reverse current blocking diode. When a transient voltage pulse occurs on the diode, a rapid decrease in the junction voltage results as the diode\'s junction capacitance begins to charge up. As this occurs, the junction voltage drops below the avalanche breakdown voltage of the diode and a large current spike is produced. This current spike is what clamps the voltage across the diode to the breakdown voltage, thus protecting the protected circuit. When the pulse is finished, the current declines and the reverse current blocking diode is reset and the process starts anew. This ensures the protected circuit is insulated from any additional transient voltage pulses until the protective diode is reset. In summary, the MXLPLAD18KP45CAE3 TVS diode is designed to provide transient voltage surge protection from high voltage overvoltage transients in automotive applications. The diode is designed to provide a series connection and protect against ESD and EFT. It is characterized for additional ESD protection as per AEC-Q100 and is suitable for automotive infotainment systems, body electronics, and automotive networking applications. The working principle of the diode is based on the tunneling and breakdown mechanism of the reverse current blocking diode, where the current spike produced when the diode\'s junction voltage drops below the avalanche breakdown voltage clamps the voltage across the diode to the breakdown voltage, thus protecting the protected circuit.


The specific data is subject to PDF, and the above content is for reference

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