MXLPLAD30KP170A

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TVS - Diodes are a form of transient-voltage-suppression (TVS) diode used for the protection of electrical, communication and data systems against transient voltage surge events such as electrostatic discharge (ESD), inductive load switching, lightning, and other electrical transients. The MXLPLAD30KP170A is a TVS - Diode optimized for protection of high-power control lines (bus protection, etc).

The MXLPLAD30KP170A features lowcapacitance and a steep clamping slope and is ideal for providing protection in automotive and industrial applications. It also offers the best performance in terms of both insertion loss and clamping voltage for high-speed differential serial interfaces providing ultimate protection for devices operating up to Gigabit data rates. Its fast response time as well as low clamping voltage and insertion loss make this diode ideal for applications that require outstanding ESD protection.

The MXLPLAD30KP170A is a bipolar (symmetrical) diode that can be reversed biased during normal operation. When an over-voltage event occurs, the device’s reverse current increases to its maximum rated value. This reverse current ("Clamping Current") is the same as the forward current provided by the reverse-biased diode, and is controlled by the device’s breakdown voltage. The MXLPLAD30KP170A has a breakdown voltage of 15V and a clamping current of 30A.

The MXLPLAD30KP170A is available in several packages, including Ultra Small Outline packages as small as 0.4mm X 0.4mm, and is highly efficient in terms of capacitance and leakage current. The device is RoHS compliant and is a suitable choice for applications in digital video, automotive electronics, telecommunications, networking, storage, military and aerospace, and other industries.

The application fields of the MXLPLAD30KP170A include automotive, telecommunication, networking, storage, military and aerospace, and other industrial products that require ESD protection. It is suitable for protecting high-speed digital signals from damage from electrostatic discharge (ESD) or voltage surge events.

The working principle of the MXLPLAD30KP170A is based on the principle of reverse biasing a semiconductor junction, which has the effect of raising the PN junction breakdown voltage above a certain level, thereby providing voltage overshoot protection from ESD or voltage surge events. When an overvoltage event occurs, the MXLPLAD30KP170A’s reverse current increases to its maximum rated value. This reverse current ("Clamping Current") is the same as the forward current provided by the reverse-biased diode, and is controlled by the device’s breakdown voltage.

In conclusion, the MXLPLAD30KP170A is a bipolar (symmetrical) diode that provides excellent ESD protection for various high-speed digital applications. It provides low insertion loss and fast response time while its low capacitance ensures minimum loading effects on data lines. The device is highly efficient in terms of both capacitance and leakage current, and is available in several small packages. The MXLPLAD30KP170A is suitable for applications in automotive, telecommunication, networking, storage, military and aerospace, and other industries.

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