MXLRT100KP180CAE3

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TVS-Diodes are a type of semiconductor chip that is used for the purpose of protecting circuits and components from adverse environmental factors. This protection, however, is provided at the expense of power. The MXLRT100KP180CAE3 is a unique TVS-diode that is designed to be used in high speed signal processing applications. The diode works on the principle of ESD (electrostatic discharge) protection, and is able to provide protection from unwanted ESD events such as lightning, electrostatic discharge, and other types of high voltage transients.

The MXLRT100KP180CAE3 is a metal oxide semiconductor field effect transistor (MOSFET). It consists of a source, gate, drain and substrate region. The source is typically grounded and the gate and drain pins can be connected to other sources for the purpose of providing input and output signals. The substrate consists of an oxide layer, which is used to separate the source and drain regions, thus forming an insulated region in between the two.

The working principle of the MXLRT100KP180CAE3 is based on ESD protection. When an external voltage greater than the breakdown voltage of the diode is applied, it triggers a gate-source voltage that creates a link between the source and drain. This action rapidly increases the current through the diode to thereby dissipate the surge energy. The internal circuitry of the diode then discards the extra energy, effectively protecting the connected components from the effects of ESD events.

The MXLRT100KP180CAE3 is a popular device that is used for various applications, such as in computer boards, telecommunications, and digital/analog signal processing equipment. It is highly suitable for high speed signal processing applications, as it provides ESD protection at very high speeds. The device also offers thermal protection, as its breakdown voltage ranges from 10 V to over 1000 V, thus making it an ideal choice for high temperature applications.

The MXLRT100KP180CAE3 is also designed to have a very low leakage current, allowing it to be used in low power circuits. Additionally, the diode offers high immunity to ESD events, and can handle temperatures up to 150 °C. Moreover, the device has a low capacitance of 0.15pF and an operating frequency range of up to 20 MHz, making it suitable for use in high-speed circuits.

In conclusion, the MXLRT100KP180CAE3 is a powerful, versatile TVS-diode. It offers a high degree of protection from ESD events, with its low junction capacitance and high immunity. Furthermore, it is suitable for many applications, such as signal processing, computer equipment, and telecommunications applications. Its low leakage current, wide operating temperature range and high operating frequency make it an ideal choice for high speed circuits.

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