MXLSMBJ12AE3 Circuit Protection |
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| Allicdata Part #: | 1086-11570-ND |
| Manufacturer Part#: |
MXLSMBJ12AE3 |
| Price: | $ 7.11 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 12V 19.9V DO214AA |
| More Detail: | N/A |
| DataSheet: | MXLSMBJ12AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 100 +: | $ 6.45599 |
| Voltage - Clamping (Max) @ Ipp: | 19.9V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 30.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 13.3V |
| Voltage - Reverse Standoff (Typ): | 12V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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TVS (transient voltage suppression) diodes are widely used in applications such as electronics, telecommunications, automotive, industrial, medical, and military.The MXLSMBJ12AE3 is one such diode used to protect valuable electronic circuits against overvoltage transients. This article will discuss the application field and the working principle of the MXLSMBJ12AE3 diode.
Application Field
The MXLSMBJ12AE3 offers low clamping voltage and increased surge power capability. This diode can be used in a wide array of applications, including automotive electronics, consumer electronics, mobile phones, tablet computers, game consoles, and portable and hand-held electronic devices. In a mobile phone,, for example, the MXLSMBJ12AE3 can be used to protect the handset’s charged circuitry from electrostatic discharge (ESD).
In automotive electronics, the MXLSMBJ12AE3 can be used to protect against electrical transients caused by spark-induced voltage surges in the engine bay. In field communications, the diode can be used to protect expensive electronics from lightning strikes and other external transients. In industrial applications, the diode can be used to protect sensitive control systems, data hazards, and critical communication channels from voltage transients.
Working Principle
The MXLSMBJ12AE3 diode is a unidirectional component, meaning that however, the high-transient voltage is blocked in the reverse direction. When the voltage exceeds the working voltage of the diode, the diode will be turned on and clamp the voltage to a safe level. This is called the avalanche breakdown of the diode, and is the primary mechanism that the diode uses to limit the voltage.
The diode also limits the voltage by creating a channel in the junction between the p-type and the n-type semiconductor layers. This channel reduces the effective resistance of the diode, allowing a controlled amount of current to flow in the forward direction. When the excess voltage is clamped, the channel is opened and the current is diverted to ground. This is how the diode is able to protect the connected circuitry from damage.
The MXLSMBJ12AE3 diode is designed to be used in applications with a relatively low working voltage of 12V. It is also capable of handling high surge power of 1000W, making it well-suited for a variety of applications.
Conclusion
The MXLSMBJ12AE3 is a transient voltage suppression diode that can be used in a variety of applications, including automotive, consumer electronics, and telecommunications. This diode offers low clamping voltage and increased surge power capability, allowing it to protect sensitive electronics from overvoltage transients. The diode works by creating a channel in the junction between the p-type and the n-type layers, allowing a controlled amount of current to flow in the forward direction. This allows the diode to limit the voltage and protect the connected circuitry.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MXLSMBJ7.5A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMCJ6.5A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMBJ54CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
| MXLSMCJ9.0CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 9V 15.4V DO214A... |
| MXLSMLJ85AE3 | Microsemi Co... | 9.25 $ | 1000 | TVS DIODE 85V 137V DO214A... |
| MXLSMCJLCE110AE3 | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 110V 178V DO214... |
| MXLSMCJLCE120A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 120V 193V DO214... |
| MXLSMCJLCE12A | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MXLSMLJ110CAE3 | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 110V 177V DO214... |
| MXLSMLJ13CAE3 | Microsemi Co... | 9.79 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
| MXLSMBJ20A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
| MXLSMBG130CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MXLSMCJ7.5AE3 | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MXLSMBG43A | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 43V 69.4V DO215... |
| MXLSMCG6.5A | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
| MXLSMCG9.0AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 9V 15.4V DO215A... |
| MXLSMCJ14CAE3 | Microsemi Co... | 7.96 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
| MXLSMLG40A | Microsemi Co... | 9.49 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MXLSMBJ120A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 120V 193V DO214... |
| MXLSMBJ6.0AE3 | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 6V 10.3V DO214A... |
| MXLSMBG12CA | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 12V 19.9V DO215... |
| MXLSMBJ16CAE3 | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MXLSMCG120CA | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 120V 193V DO215... |
| MXLSMCG8.5CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MXLSMCGLCE70A | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MXLSMCGLCE70AE3 | Microsemi Co... | 9.62 $ | 1000 | TVS DIODE 70V 113V DO215A... |
| MXLSMCG160CAE3 | Microsemi Co... | 8.12 $ | 1000 | TVS DIODE 160V 259V DO215... |
| MXLSMBJ26AE3 | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MXLSMBG120CA | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 120V 193V DO215... |
| MXLSMBG60CAE3 | Microsemi Co... | 7.18 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
| MXLSMCJ12A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MXLSMBJ9.0CA | Microsemi Co... | 7.49 $ | 1000 | TVS DIODE 9V 15.4V DO214A... |
| MXLSMBG18AE3 | Microsemi Co... | 7.61 $ | 1000 | TVS DIODE 18V 29.2V DO215... |
| MXLSMCG150A | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 150V 243V DO215... |
| MXLSMCG22AE3 | Microsemi Co... | 7.67 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
| MXLSMCJLCE8.0AE3 | Microsemi Co... | 9.28 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MXLSMCJLCE14AE3 | Microsemi Co... | 9.35 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
| MXLSMBJ33A | Microsemi Co... | 7.11 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
| MXLSMCJ70A | Microsemi Co... | 7.43 $ | 1000 | TVS DIODE 70V 113V DO214A... |
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MXLSMBJ12AE3 Datasheet/PDF