MXSMBG64AE3 Allicdata Electronics

MXSMBG64AE3 Circuit Protection

Allicdata Part #:

1086-13950-ND

Manufacturer Part#:

MXSMBG64AE3

Price: $ 17.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 64V 103V DO215AA
More Detail: N/A
DataSheet: MXSMBG64AE3 datasheetMXSMBG64AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 15.55910
Stock 1000Can Ship Immediately
$ 17.12
Specifications
Voltage - Clamping (Max) @ Ipp: 103V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 5.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 71.1V
Voltage - Reverse Standoff (Typ): 64V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS - Diodes are devices designed to protect against electrostatic discharge, over - voltage, transient voltage, temperature, and transient current. They are made of two or more p - type and n - type semiconductor materials stacked together to create a voltage-sensitive junction. The main purpose of a TVS diode is to protect electronic components from damaging transients, such as high voltage, from overloads and short circuits.

The MXSMBG64AE3 TVS diode is a small, fast-response, negative-transient-voltage-protection device that provides a low clamping voltage and protects against both positive and negative transients. Built with a leading-edge technology process, the MXSMBG64AE3 is designed to provide superior protection with a low clamping voltage and a low leakage current. The MXSMBG64AE3 TVS diode is ideal for a variety of computer, consumer electronics, and automotive applications.

A key feature of the MXSMBG64AE3 is its robust structure and high surge capability. The device has a low breakover voltage rating for increased protection, providing enhanced backward and forward RMS current clamping over a temperature range of -55°C to +125°C. The device can also withstand up to 6,000 watts of ESD power.

The main working principle behind the MXSMBG64AE3 is its p-n junction. When a transient voltage of adequate magnitude is applied, the p-n junction begins to conduct. This current flows across the junction and is dissipated as heat, lowering the reverse voltage to the desired level. This process is known as clamping. The device is designed to break down at very low voltages to allow the current to start flowing and then clamp it at a safe level. The device will remain in this state until the voltage falls below a certain threshold, at which point the device will turn off and the voltage will return to its original level.

The MXSMBG64AE3 can be used in a variety of applications, such as protecting sensitive electronics from over-voltage damage or acting as a current regulation device. It is also useful in transient-voltage-sensitive applications, such as automotive electronics, telecommunication systems, industrial automation, and professional audio equipment. The device is also able to aid in EMI/RFI filtering, both through its fast-acting clamping response and effective heat dissipation.

In summary, the MXSMBG64AE3 is a high-performance TVS diode with a small footprint and a wide operating temperature range. It is designed to provide superior protection against electrostatic discharge, over-voltages, and transient voltages, while also providing effective EMI/RFI filtering. The device is ideal for a variety of applications, from automotive electronics to industrial automation and telecommunication.

The specific data is subject to PDF, and the above content is for reference

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