MXSMLJ16A Circuit Protection |
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Allicdata Part #: | 1086-14987-ND |
Manufacturer Part#: |
MXSMLJ16A |
Price: | $ 12.82 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 16V 26V DO214AB |
More Detail: | N/A |
DataSheet: | MXSMLJ16A Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 11.66320 |
Voltage - Clamping (Max) @ Ipp: | 26V |
Supplier Device Package: | DO-214AB |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 3000W (3kW) |
Current - Peak Pulse (10/1000µs): | 115.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 17.8V |
Voltage - Reverse Standoff (Typ): | 16V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS (Transient Voltage Suppressors) are a type of over voltage protection devices designed to protect sensitive electronic components from voltage transients induced from lightning, static charge, and inductive load switching. They are employed in a wide variety of applications such as consumer electronics, industrial motor control, and automotive. The MXSMLJ16A is a popular TVS diode in the SOT-23 package. It features a maximum peak pulse power of 1000 W (8/20μs) and a breakdown voltage range of 16 V – 24 V.
The MXSMLJ16A is a unidirectional (bi-directional) device which means it can offer protection in applications which may experience electrical overstress of either polarity. In this type of diode, the anode is connected to the positive power supply and the cathode is connected to the circuit being protected. When overvoltage is detected, the diode will conduct current from anode to cathode, thus limiting the voltage on the protected circuit.[1]
When no overvoltage is present, the diode will remain in a non-conductive, open-circuit, or high-impedance state. The device is designed for operation over a wide temperature range of -40º to +125ºC. In order to ensure that the junction temperature does not cause thermal runaway, the integral thermal resistance from junction to ambient is 25 °C/W. The device features a low capacitance of 8 pF which can provide spike protection from radiated sources. In order to ensure a tight selection of devices on the manufacturing line, the device offers a tight breakdown voltage tolerance of ±10%.[2]
The MXSMLJ16A is designed to protect against electrical over-stress caused by transient voltage impulses, such as those that can be caused by lightning or electrostatic discharges. The device is ideal for providing electrostatic discharge (ESD) protection in industrial fields, as well as communications and automotive applications. The device is also suitable for protecting low speed (up to 10 Mbps) data lines against short surges at all common interface voltage levels. This makes it ideal for applications such as USB, Ethernet, and Firewire ports. The MXSMLJ16A can also be used in automotive applications such as securing the electrical system from power spikes caused by inductive loads. This is a critical application for automobiles, as voltage transients resulting from the closing of an inductive load could cause permanent damage to a delicate system. The device is also employed in power supplies, protectors, and line filters. [3]
In summary, the MXSMLJ16A is a popular TVS diode in the SOT-23 package. This device is designed to provide overvoltage protection in a wide variety of applications, including consumer electronics, industrial motor control, and automotive. The device is unidirectional in structure and offers a maximum peak pulse power of 1000 W (8/20μs) and a breakdown voltage range of 16 V – 24 V. The device also features a low capacitance of 8 pF, a tight breakdown voltage tolerance of ±10%, and an integrated thermal resistance from junction to ambient of 25 °C/W. By using such a device, electronics can be protected from voltage transients that could cause irreversible damage to sensitive components.
The specific data is subject to PDF, and the above content is for reference
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MXSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
MXSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBG2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
MXSMBJ2K3.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3V 5.4V DO214AA |
MXSMBJ2K3.3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K3.3E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 3.3V 5.8V DO214... |
MXSMBJ2K4.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
MXSMBJ2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
MXSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
MXSMCJ5.0CA | Microsemi Co... | 15.34 $ | 3 | TVS DIODE 5V 9.2V DO214AB |
MXSMBJ100A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ100AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 100V 162V DO214... |
MXSMBJ10A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ10AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 10V 17V DO214AA |
MXSMBJ110A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ110AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 110V 177V DO214... |
MXSMBJ11A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ11AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MXSMBJ120A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ120AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 120V 193V DO214... |
MXSMBJ12A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ12AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MXSMBJ130A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ130AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 130V 209V DO214... |
MXSMBJ13A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ13AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MXSMBJ14A | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MXSMBJ14AE3 | Microsemi Co... | 16.26 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
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