MXSMCG10CAE3 Allicdata Electronics

MXSMCG10CAE3 Circuit Protection

Allicdata Part #:

1086-14222-ND

Manufacturer Part#:

MXSMCG10CAE3

Price: $ 12.31
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 10V 17V DO215AB
More Detail: N/A
DataSheet: MXSMCG10CAE3 datasheetMXSMCG10CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 11.17930
Stock 1000Can Ship Immediately
$ 12.31
Specifications
Voltage - Clamping (Max) @ Ipp: 17V
Supplier Device Package: SMCG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 88.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 11.1V
Voltage - Reverse Standoff (Typ): 10V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS-Diodes are zener diodes, unidirectional and bidirectional, current and voltage limiter diodes, transient suppression diodes, and ESD protection diodes. The MXSMCG10CAE3 diode is a unidirectional, transient suppression diode, designed specifically to safeguard systems that might be subject to electrostatic discharge (ESD), or techniques of electrical overstress (EOS).

The main application field of MXSMCG10CAE3 is in portable electronic devices, such as for the protection of LCD displays, notebook computers, cellular phones, personal digital assistants (PDAs), wireless handheld devices, etc. In these devices, the component provides enhanced protection against ESD and EOS levels ranging from hundreds of volts to thousands of volts.

The working principle of the MXSMCG10CAE3 involves the breakdown of the diode junction when high voltages are applied. The breakdown is continuous until the applied voltage is reduced to a level below the diode\'s specified breakdown voltage. During the breakdown, the diode is able to withstand and suppress transient surges, thus protecting other components from any adverse effects from the surge.

The MXSMCG10CAE3 features protection against both ESD and EOS hazards. Its low on-state resistance (typically 0.5Ω) enables very low capacitive loading, thus allowing high signal integrity and minimum power dissipation. In addition, the diode is available in a low profile SOT-23 package to facilitate the design of space-constrained applications.

The MXSMCG10CAE3 is designed to protect against the most stringent ESD requirements, namely IEC 61000-4-2 (level 4, 8kV air, 8kV contact) and EOS protection levels up to 5kV (HRM). The component can absorb continuous operating voltages up to maximum rated DC voltage of 12V. The device operates with a typical leakage current of 4µA at 10V and is ideal for use in consumer electronics and digital communications receivers.

This diode is also RoHS compliant and it will not generate any secondary damage to the applications it is protecting.

The MXSMCG10CAE3 offers an attractive solution for protection against ESD and EOS threat in portable and handheld devices, providing a high level of reliability, performance and convenience. In addition, it has low leakage current, low capacitance, and high ESD and EOS protection, allowing designers to ensure the safety of their end products before they are exposed to an external environment.

The specific data is subject to PDF, and the above content is for reference

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